600V super junction MOSFETs in the NE series from Taiwan Semiconductor 

Among our new portfolio additions are the 600V super junction MOSFETs in Taiwan Semiconductor’s NE series (TSM60NExx), which have been designed to improve efficiency and power density in high-voltage applications. Integrating 4th generation super junction technology that enables an exceptionally low on-resistance (RDS(ON)) and low gate charge (QG), the MOSFETs provide excellent switching performance and efficiency.
Compared to alternatives, these new TSC MOSFETs achieve improved performance in many high-voltage applications while also providing high gate noise immunity.

Depending on the type, maximum on-resistance ranges from 0.069 to 0.285 ohms and gate charge at 10V ranges from 22 to 114nC. Reverse recovery charge (Qrr) is 11% lower. Other features include a drain current (ID) from 11 to 61A, depending on type, and power loss (PD) from 56 to 431W, also type-dependent. All models can be used up to a maximum temperature of 150°C. With a 30% higher figure-of-merit (FOM), the NE series from Taiwan Semiconductor sets new standards and enables the construction of smaller and more efficient systems.

Target applications for Taiwan Semiconductor's NE series (TSM60NExx) include switching power supplies, server power supplies, high-voltage motor drives, UPS systems and lighting controls.