IRFB9N65APBF

Vishay THT Power MOSFET N-Channel 8,5A 167W 930mOhm  TO-220AB

IRFB9N65APBF
Manufacturer Part No.
IRFB9N65APBF
Schukat Part No.
IRFB9N65APBF
Manufacturer
Enter your company's part number here. Your part number will be referenced on your receipts, such as the order confirmation, invoice or delivery note.
Enter your personal project number here to assign the item to a project. Your part project number will be referenced on your receipts, such as the order confirmation, invoice or delivery note.

Item no longer available!

Planned delivery time
---
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between: • Active (green) • NRND = Not Recommended for New Designs (yellow) • LTB = Last Time Buy (yellow) • EOL = End of Life (red)
EOL 05.11.2024
Discontinued by manufacturer without replacement
Replacement / Follow-up View entire series
Data Sheet
ECAD Model
Downloads

Prices

Manufacturer bundle 50 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.

Quantity and Options

(at least 1000 or multiple of 1000)
All prices net plus VAT. We do not deliver to private customers.

Fact Sheet

Number of Channels
1
Polarity
N-Channel
(Id) Continuous Drain Current
8,5 A
(Pd) Power Dissipation
167 W
(RDS(on)) Drain-Source Resistance Max.
930 mOhm 
Manufacturer Package
TO-220AB
RoHS-Conform

Specifications

Close all

General

Manufacturer
  • Vishay
Type
  • Power MOSFET
Series
  • IRF_
Product group
  • U8383
Packaging
  • Tube
Assembly Type
  • THT
Pin Count
  • 3
Manufacturer Package
  • TO-220AB

Operating conditions

Barrier Layer temperature, min. (TJ)
  • -55 °C
Barrier Layer Temperature, max. (TJ)
  • 150 °C
Storage Temperature Min.
  • -55 °C
Storage Temperature Max.
  • 150 °C

Electrical Properties

(Uds) Max. Drain-Source Voltage
  • 650 V
(Id) Continuous Drain Current
  • 8,5 A
(Ugs) Gate-Source Voltage
  • 30 V
Number of Channels
  • 1
Polarity
  • N-Channel
(Pd) Power Dissipation
  • 167 W
(RDS(on)) Drain-Source Resistance Max.
  • 930 mOhm 

Documents

EOL_PTN-SIL-027-2024-REV-0_EN.pdf