TST30122C
Taiwan Semiconductor THT Schottky Trench Diode 0,90V 30000mA 260000mA TO-220AB
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Planned delivery time
- Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between:
• Active (green)
• NRND = Not Recommended for New Designs (yellow)
• LTB = Last Time Buy (yellow)
• EOL = End of Life (red)
LTB 26.03.2027
Data Sheet
ECAD Model
Prices
Manufacturer bundle 50 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.
Quantity and Options
(at least 1000 or multiple of 50)
All prices net plus VAT. We do not deliver to private customers.
Fact Sheet
- (Uf) Forward Voltage
- 0.9 V
- (If) Forward Current
- 30,000 mA
- Peak Let-Through Surrent Max.
- 260,000 mA
- (Urrm) Peak Recurrent Reverse Voltage Max.
- 120 V
- (Ir) Reverse Current
- 50,000 nA
- RoHS-Conform
Specifications
Open all
Operating conditions
- Barrier Layer temperature, min. (TJ)
- -55 °C
- Barrier Layer Temperature, max. (TJ)
- 150 °C
- Storage Temperature Min.
- -55 °C
- Storage Temperature Max.
- 150 °C
Electrical Properties
- (Uf) Forward Voltage
- 0.9 V
- (If) Forward Current
- 30,000 mA
- Peak Let-Through Surrent Max.
- 260,000 mA
- (Urrm) Peak Recurrent Reverse Voltage Max.
- 120 V
- (Ir) Reverse Current
- 50,000 nA
Documents
EOL_PDN26001 rev0_EN.pdf
PCN_26001 rev0_EN.pdf