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TSM900N10CH X0G

Taiwan Semiconductor THT Power MOSFET N-Channel 15A 50W 100mOhm  TO-251S (IPAK SL)

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Manufacturer Part No.
TSM900N10CH X0G
Schukat Part No.
TSM900N10CH
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3.330 Pcs. in stock

Planned delivery time
Ø 21 Weeks
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between: • Active (green) • NRND = Not Recommended for New Designs (yellow) • LTB = Last Time Buy (yellow) • EOL = End of Life (red)
Active
Available (from stock)
Replacement / Follow-up View entire series
Data Sheet
ECAD Model
Downloads

Prices

Manufacturer bundle 3750 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.

Quantity and Options

(at least 15 or multiple of 15)
All prices net plus VAT. We do not deliver to private customers.

Fact Sheet

Number of Channels
1
Polarity
N-Channel
(Id) Continuous Drain Current
15 A
15 A
(Pd) Power Dissipation
50 W
(RDS(on)) Drain-Source Widerstand max.
100 mOhm 
Manufacturer Package
TO-251S (IPAK SL)
RoHS-Conform

Specifications

Open all

General

Manufacturer
  • Taiwan Semiconductor
Type
  • Power MOSFET
Series
  • TSM900N
Packaging
  • Tube
Assembly Type
  • THT
Pin Count
  • 3
Manufacturer Package
  • TO-251S (IPAK SL)

Operating conditions

Operating Temperature Min.
  • -55 °C
Operating Temperature Max.
  • 150 °C

Electrical properties

(Uds) Max. Drain-Source Voltage Q1
  • 100 V
(Uds) Max. Drain-Source Voltage
  • 100 V
  • 100 V
(Id) Continuous Drain Current Q1
  • 15 A
(Id) Continuous Drain Current
  • 15 A
  • 15 A
(Ugs) Gate-Source Voltage Q1
  • 20 V V
(Ugs) Gate-Source Voltage
  • 20 V
  • 20 V
Number of Channels
  • 1
Polarity
  • N-Channel
(Pd) Power Dissipation
  • 50 W
(RDS(on)) Drain-Source Widerstand max.
  • 100 mOhm 
(Qg) Gate Charge Q1
  • 9.3 nC
(Qg) Gate Charge
  • 9,3 nC
  • 9,3 nC