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TSM900N10CH X0G

Taiwan Semiconductor THT Power MOSFET N-Channel 15A 50W 100mOhm  TO-251S (IPAK SL)

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Manufacturer Part No.
TSM900N10CH X0G
Schukat Part No.
TSM900N10CH
Manufacturer
Taiwan Semiconductor
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3.210 Pcs. in stock

Planned delivery time
Ø 21 Weeks
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between: • Active (green) • NRND = Not Recommended for New Designs (yellow) • LTB = Last Time Buy (yellow) • EOL = End of Life (red)
Active
Available (from stock)
Replacement / Follow-up View entire series
Data Sheet
Open PDF
ECAD Model
Downloads

Prices

Manufacturer bundle 3750 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.

Quantity and Options

(at least 15 or multiple of 15)
All prices net plus VAT. We do not deliver to private customers.

Fact Sheet

Number of Channels
1
Polarity
N-Channel
(Id) Continuous Drain Current
15 A
15 A
(Pd) Power Dissipation
50 W
(RDS(on)) Drain-Source Widerstand max.
100 mOhm 
Manufacturer Package
TO-251S (IPAK SL)
RoHS-Conform

Specifications

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General

Manufacturer
  • Taiwan Semiconductor
Type
  • Power MOSFET
Series
  • TSM900N
Product group
  • U8379 TSC Power MOSFETs TSM_CH TO251_
Packaging
  • Tube
Assembly Type
  • THT
Pin Count
  • 3
Manufacturer Package
  • TO-251S (IPAK SL)

Operating conditions

Operating Temperature Min.
  • -55 °C
Operating Temperature Max.
  • 150 °C
Storage Temperature Min.
  • -55 °C
Storage Temperature Max.
  • 150 °C

Electrical properties

(Uds) Max. Drain-Source Voltage Q1
  • 100 V
(Uds) Max. Drain-Source Voltage
  • 100 V
  • 100 V
(Id) Continuous Drain Current Q1
  • 15 A
(Id) Continuous Drain Current
  • 15 A
  • 15 A
(Ugs) Gate-Source Voltage Q1
  • 20 V V
(Ugs) Gate-Source Voltage
  • 20 V
  • 20 V
Number of Channels
  • 1
Polarity
  • N-Channel
(Pd) Power Dissipation
  • 50 W
(RDS(on)) Drain-Source Widerstand max.
  • 100 mOhm 
(Qg) Gate Charge Q1
  • 9.3 nC
(Qg) Gate Charge
  • 9,3 nC
  • 9,3 nC