TSM900N06CW RPG
Taiwan Semiconductor SMD/SMT Power MOSFET N-Channel 6A 7,8W 126mOhm SOT-223
Manufacturer Part No.
TSM900N06CW RPG
Schukat Part No.
TSM900N06CW
Manufacturer
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5.175 Pcs. in stock
Planned delivery time
Ø 20 Weeks
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between:
• Active (green)
• NRND = Not Recommended for New Designs (yellow)
• LTB = Last Time Buy (yellow)
• EOL = End of Life (red)
Active
Available (from stock)
Data Sheet
ECAD Model
Prices
Manufacturer bundle 2500 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.
Quantity and Options
(at least 25 or multiple of 25)
All prices net plus VAT. We do not deliver to private customers.
Fact Sheet
- Number of Channels
- 1
- Polarity
- N-Channel
- (Id) Continuous Drain Current
- 6 A
- (Pd) Power Dissipation
- 7.8 W
- (RDS(on)) Drain-Source Resistance Max.
- 126 mOhm
- Manufacturer Package
- SOT-223
- RoHS-Conform
Specifications
Open all
Operating conditions
- Barrier Layer temperature, min. (TJ)
- -55 °C
- Barrier Layer Temperature, max. (TJ)
- 150 °C
- Storage Temperature Min.
- -55 °C
- Storage Temperature Max.
- 150 °C
Electrical Properties
- (Uds) Max. Drain-Source Voltage
- 60 V
- (Id) Continuous Drain Current
- 6 A
- (Ugs) Gate-Source Voltage
- 20 V
- Number of Channels
- 1
- Polarity
- N-Channel
- (Pd) Power Dissipation
- 7.8 W
- (RDS(on)) Drain-Source Resistance Max.
- 126 mOhm
- (Qg) Gate Charge
- 11 nC