TSM80N950CI C0G

Taiwan Semiconductor THT Power MOSFET N-Channel 6A 25W 950mOhm  ITO-220

TSM80N950CI
Manufacturer Part No.
TSM80N950CI C0G
Schukat Part No.
TSM80N950CI
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900 Pcs. in stock

Planned delivery time
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Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between: • Active (green) • NRND = Not Recommended for New Designs (yellow) • LTB = Last Time Buy (yellow) • EOL = End of Life (red)
EOL 19.01.2024
Discontinued by manufacturer without replacement
Replacement / Follow-up View entire series
Data Sheet
ECAD Model
Downloads
Manufacturer bundle 2000 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.

Quantity and Options

(at least 10 or multiple of 10)
All prices net plus VAT. We do not deliver to private customers.

Fact Sheet

Number of Channels
1
Polarity
N-Channel
(Id) Continuous Drain Current
6 A
(Pd) Power Dissipation
25 W
(RDS(on)) Drain-Source Resistance Max.
950 mOhm 
Manufacturer Package
ITO-220
RoHS-Conform

Specifications

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General

Manufacturer
  • Taiwan Semiconductor
Type
  • Power MOSFET
Series
  • TSM_CI
Product group
  • U8380
Packaging
  • Tube
Assembly Type
  • THT
Pin Count
  • 3
Manufacturer Package
  • ITO-220

Operating conditions

Barrier Layer temperature, min. (TJ)
  • -55 °C
Barrier Layer Temperature, max. (TJ)
  • 150 °C
Storage Temperature Min.
  • -55 °C
Storage Temperature Max.
  • 150 °C

Electrical Properties

(Uds) Max. Drain-Source Voltage
  • 800 V
(Id) Continuous Drain Current
  • 6 A
(Ugs) Gate-Source Voltage
  • 30 V
Number of Channels
  • 1
Polarity
  • N-Channel
(Pd) Power Dissipation
  • 25 W
(RDS(on)) Drain-Source Resistance Max.
  • 950 mOhm 
(Qg) Gate Charge
  • 19,6 nC

Documents

EOL_PDN24001rev0_EN.pdf