TSM60NE285CIT C0G
Taiwan Semiconductor THT Power MOSFET N-Channel 56W 285mOhm ITO-220TL
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Manufacturer Part No.
TSM60NE285CIT C0G
Schukat Part No.
TSM60NE285CIT C0G
Manufacturer
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0 Pcs. in stock
Back Order
4.000 Pcs.
4.000 Pcs.
Planned delivery time
Ø 45 Weeks
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between:
• Active (green)
• NRND = Not Recommended for New Designs (yellow)
• LTB = Last Time Buy (yellow)
• EOL = End of Life (red)
Active
Available on order
Data Sheet
Prices
Manufacturer bundle 2000 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.
Quantity and Options
(at least 4000 or multiple of 2000)
All prices net plus VAT. We do not deliver to private customers.
Fact Sheet
- Number of Channels
- 1
- Polarity
- N-Channel
- (Pd) Power Dissipation
- 56 W
- (RDS(on)) Drain-Source Widerstand max.
- 285 mOhm
- Manufacturer Package
- ITO-220TL
- RoHS-Conform
Specifications
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Operating conditions
- Operating Temperature Min.
- -55 °C
- Operating Temperature Max.
- 150 °C
- Storage Temperature Min.
- -55 °C
- Storage Temperature Max.
- 150 °C
Electrical properties
- (Uds) Max. Drain-Source Voltage Q1
- 600 V
- (Uds) Max. Drain-Source Voltage
- 600 V
- 600 V
- (Ugs) Gate-Source Voltage Q1
- 9,5 V
- (Ugs) Gate-Source Voltage
- 9,5
- 9,5
- (Ugs th) Gate-Source Threshold Voltage Q1
- 30 V
- (Ugs th) Gate-Source Threshold Voltage
- 30 V
- 30 V
- Number of Channels
- 1
- Polarity
- N-Channel
- (Pd) Power Dissipation
- 56 W
- (RDS(on)) Drain-Source Widerstand max.
- 285 mOhm
- (Qg) Gate Charge Q1
- 22 nC
- (Qg) Gate Charge
- 22 nC
- 22 nC