TSM60NE285CH C5G
Taiwan Semiconductor THT Power MOSFET N-Channel 15A 139W 285mOhm TO-251
Manufacturer Part No.
TSM60NE285CH C5G
Schukat Part No.
TSM60NE285CH C5G
Manufacturer
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0 Pcs. in stock
Planned delivery time
Ø 16 Weeks
Life Cycle Status
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• Active (green)
• NRND = Not Recommended for New Designs (yellow)
• LTB = Last Time Buy (yellow)
• EOL = End of Life (red)
Active
Available on order
Data Sheet
ECAD Model
Prices
Manufacturer bundle 3750 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.
Quantity and Options
(at least 15000 or multiple of 3750)
All prices net plus VAT. We do not deliver to private customers.
Fact Sheet
- Number of Channels
- 1
- Polarity
- N-Channel
- (Id) Continuous Drain Current
- 15 A
- (Pd) Power Dissipation
- 139 W
- (RDS(on)) Drain-Source Resistance Max.
- 285 mOhm
- Manufacturer Package
- TO-251
- RoHS-Conform
Specifications
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Operating conditions
- Barrier Layer temperature, min. (TJ)
- -55 °C
- Barrier Layer Temperature, max. (TJ)
- 150 °C
- Storage Temperature Min.
- -55 °C
- Storage Temperature Max.
- 150 °C
Electrical Properties
- (Uds) Max. Drain-Source Voltage
- 600 V
- (Id) Continuous Drain Current
- 15 A
- (Ugs) Gate-Source Voltage
- 30 V
- (Ugs th) Gate-Source Threshold Voltage
- 4,8 V
- Number of Channels
- 1
- Polarity
- N-Channel
- (Pd) Power Dissipation
- 139 W
- (RDS(on)) Drain-Source Resistance Max.
- 285 mOhm
- (Qg) Gate Charge
- 22 nC
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