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TSM60NE069PW C0G

Taiwan Semiconductor THT Power MOSFET N-Channel 417W 69mOhm  TO-247

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Manufacturer Part No.
TSM60NE069PW C0G
Schukat Part No.
TSM60NE069PW C0G
Manufacturer
Taiwan Semiconductor
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0 Pcs. in stock

Back Order
900 Pcs.
Planned delivery time
Ø 45 Weeks
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between: • Active (green) • NRND = Not Recommended for New Designs (yellow) • LTB = Last Time Buy (yellow) • EOL = End of Life (red)
Active
Available on order
Replacement / Follow-up View entire series
Data Sheet
Open PDF
ECAD Model
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Prices

Manufacturer bundle 300 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.

Quantity and Options

(at least 900 or multiple of 300)
All prices net plus VAT. We do not deliver to private customers.

Fact Sheet

Number of Channels
1
Polarity
N-Channel
(Pd) Power Dissipation
417 W
(RDS(on)) Drain-Source Widerstand max.
69 mOhm 
Manufacturer Package
TO-247
RoHS-Conform

Specifications

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General

Manufacturer
  • Taiwan Semiconductor
Type
  • Power MOSFET
Series
  • TSM60NE_
Product group
  • U8380 TSC Power MOSFETs TSM_CF, TSM_CI, TSM_CZ ITO220_, TO220
Packaging
  • Tube
Assembly Type
  • THT
Pin Count
  • 3
Manufacturer Package
  • TO-247

Operating conditions

Operating Temperature Min.
  • -55 °C
Operating Temperature Max.
  • 150 °C
Storage Temperature Min.
  • -55 °C
Storage Temperature Max.
  • 150 °C

Electrical properties

(Uds) Max. Drain-Source Voltage Q1
  • 600 V
(Uds) Max. Drain-Source Voltage
  • 600 V
  • 600 V
(Ugs) Gate-Source Voltage Q1
  • 51 V
(Ugs) Gate-Source Voltage
  • 51
  • 51
(Ugs th) Gate-Source Threshold Voltage Q1
  • 30 V
(Ugs th) Gate-Source Threshold Voltage
  • 30 V
  • 30 V
Number of Channels
  • 1
Polarity
  • N-Channel
(Pd) Power Dissipation
  • 417 W
(RDS(on)) Drain-Source Widerstand max.
  • 69 mOhm 
(Qg) Gate Charge Q1
  • 86 nC
(Qg) Gate Charge
  • 86 nC
  • 86 nC

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