TSM60NE048PW C0G
Taiwan Semiconductor THT Power MOSFET N-Channel 431W 48mOhm TO-247
NEW
Manufacturer Part No.
TSM60NE048PW C0G
Schukat Part No.
TSM60NE048PW C0G
Manufacturer
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0 Pcs. in stock
Back Order
900 Pcs.
900 Pcs.
Planned delivery time
Ø 45 Weeks
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between:
• Active (green)
• NRND = Not Recommended for New Designs (yellow)
• LTB = Last Time Buy (yellow)
• EOL = End of Life (red)
Active
Available on order
Data Sheet
ECAD Model
Prices
Manufacturer bundle 300 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.
Quantity and Options
(at least 900 or multiple of 300)
All prices net plus VAT. We do not deliver to private customers.
Fact Sheet
- Number of Channels
- 1
- Polarity
- N-Channel
- (Pd) Power Dissipation
- 431 W
- (RDS(on)) Drain-Source Widerstand max.
- 48 mOhm
- Manufacturer Package
- TO-247
- RoHS-Conform
Specifications
Open all
Operating conditions
- Operating Temperature Min.
- -55 °C
- Operating Temperature Max.
- 150 °C
- Storage Temperature Min.
- -55 °C
- Storage Temperature Max.
- 150 °C
Electrical properties
- (Uds) Max. Drain-Source Voltage Q1
- 600 V
- (Uds) Max. Drain-Source Voltage
- 600 V
- 600 V
- (Ugs) Gate-Source Voltage Q1
- 61 V
- (Ugs) Gate-Source Voltage
- 61
- 61
- (Ugs th) Gate-Source Threshold Voltage Q1
- 30 V
- (Ugs th) Gate-Source Threshold Voltage
- 30 V
- 30 V
- Number of Channels
- 1
- Polarity
- N-Channel
- (Pd) Power Dissipation
- 431 W
- (RDS(on)) Drain-Source Widerstand max.
- 48 mOhm
- (Qg) Gate Charge Q1
- 114 nC
- (Qg) Gate Charge
- 114 nC
- 114 nC