TSM60NC196CI C0G
Taiwan Semiconductor THT Power MOSFET N-Channel 20A 70W 196mOhm ITO-220
Manufacturer Part No.
TSM60NC196CI C0G
Schukat Part No.
TSM60NC196CI C0G
Manufacturer
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0 Pcs. in stock
Back Order
4.000 Pcs.
4.000 Pcs.
Planned delivery time
Ø 9 Weeks
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between:
• Active (green)
• NRND = Not Recommended for New Designs (yellow)
• LTB = Last Time Buy (yellow)
• EOL = End of Life (red)
Active
Available on order
Data Sheet
ECAD Model
Prices
Manufacturer bundle 2000 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.
Quantity and Options
(at least 4000 or multiple of 2000)
All prices net plus VAT. We do not deliver to private customers.
Fact Sheet
- Polarity
- N-Channel
- (Id) Continuous Drain Current
- 20 A
20 A - (Pd) Power Dissipation
- 70 W
- (RDS(on)) Drain-Source Widerstand max.
- 196 mOhm
- Manufacturer Package
- ITO-220
- RoHS-Conform
Specifications
Open all
Operating conditions
- Operating Temperature Min.
- -55 °C
- Operating Temperature Max.
- 150 °C
- Storage Temperature Min.
- -55 °C
- Storage Temperature Max.
- 150 °C
Electrical properties
- (Uds) Max. Drain-Source Voltage Q1
- 600 V
- (Uds) Max. Drain-Source Voltage
- 600 V
- 600 V
- (Id) Continuous Drain Current Q1
- 20 A
- (Id) Continuous Drain Current
- 20 A
- 20 A
- (Ugs) Gate-Source Voltage Q1
- 30 V V
- (Ugs) Gate-Source Voltage
- 30 V
- 30 V
- Polarity
- N-Channel
- (Pd) Power Dissipation
- 70 W
- (RDS(on)) Drain-Source Widerstand max.
- 196 mOhm
- (Qg) Gate Charge Q1
- 44 nC
- (Qg) Gate Charge
- 44 nC
- 44 nC