TSM60NB900CP ROG

Taiwan Semiconductor SMD/SMT Power MOSFET N-Channel 4A 36,8W 900mOhm  TO-252 (DPAK)

TSM60NB900CP
Manufacturer Part No.
TSM60NB900CP ROG
Schukat Part No.
TSM60NB900CP
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1.725 Pcs. in stock

Planned delivery time
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Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between: • Active (green) • NRND = Not Recommended for New Designs (yellow) • LTB = Last Time Buy (yellow) • EOL = End of Life (red)
EOL 19.01.2024
Cancelled by manufacturer without replacement
Replacement / Follow-up View entire series
Data Sheet
ECAD Model
Downloads

Prices

Manufacturer bundle 2500 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.

Quantity and Options

(at least 25 or multiple of 25)
All prices net plus VAT. We do not deliver to private customers.

Fact Sheet

Number of Channels
1
Polarity
N-Channel
(Id) Continuous Drain Current
4 A
(Pd) Power Dissipation
36.8 W
(RDS(on)) Drain-Source Resistance Max.
900 mOhm 
Manufacturer Package
TO-252 (DPAK)
RoHS-Conform

Specifications

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General

Manufacturer
  • Taiwan Semiconductor
Type
  • Power MOSFET
Series
  • TSM_CP
Product group
  • U8767
Packaging
  • Reel
Assembly Type
  • SMD/SMT
Pin Count
  • 3
Manufacturer Package
  • TO-252 (DPAK)

Operating conditions

Barrier Layer temperature, min. (TJ)
  • -55 °C
Barrier Layer Temperature, max. (TJ)
  • 150 °C
Storage Temperature Min.
  • -55 °C
Storage Temperature Max.
  • 150 °C

Electrical Properties

(Uds) Max. Drain-Source Voltage
  • 600 V
(Id) Continuous Drain Current
  • 4 A
(Ugs) Gate-Source Voltage
  • 30 V
Number of Channels
  • 1
Polarity
  • N-Channel
(Pd) Power Dissipation
  • 36.8 W
(RDS(on)) Drain-Source Resistance Max.
  • 900 mOhm 
(Qg) Gate Charge
  • 9,6 nC

Documents

EOL_PDN24001rev0_EN.pdf