TSM60NB600CH C5G

Taiwan Semiconductor THT Power MOSFET N-Channel 7A 63W 600mOhm  TO-251 (IPAK)

TSM60NB600CH
Manufacturer Part No.
TSM60NB600CH C5G
Schukat Part No.
TSM60NB600CH
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3.000 Pcs. in stock

Planned delivery time
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Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between: • Active (green) • NRND = Not Recommended for New Designs (yellow) • LTB = Last Time Buy (yellow) • EOL = End of Life (red)
EOL 19.01.2024
Discontinued by manufacturer without replacement
Replacement / Follow-up View entire series
Data Sheet
ECAD Model
Downloads
Manufacturer bundle 3750 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.

Quantity and Options

(at least 15 or multiple of 15)
All prices net plus VAT. We do not deliver to private customers.

Fact Sheet

Number of Channels
1
Polarity
N-Channel
(Id) Continuous Drain Current
7 A
(Pd) Power Dissipation
63 W
(RDS(on)) Drain-Source Resistance Max.
600 mOhm 
Manufacturer Package
TO-251 (IPAK)
RoHS-Conform

Specifications

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General

Manufacturer
  • Taiwan Semiconductor
Type
  • Power MOSFET
Series
  • TSM_CH
Product group
  • U8379
Packaging
  • Tube
Assembly Type
  • THT
Pin Count
  • 3
Manufacturer Package
  • TO-251 (IPAK)

Operating conditions

Barrier Layer temperature, min. (TJ)
  • -55 °C
Barrier Layer Temperature, max. (TJ)
  • 150 °C
Storage Temperature Min.
  • -55 °C
Storage Temperature Max.
  • 150 °C

Electrical Properties

(Uds) Max. Drain-Source Voltage
  • 600 V
(Id) Continuous Drain Current
  • 7 A
(Ugs) Gate-Source Voltage
  • 30 V
Number of Channels
  • 1
Polarity
  • N-Channel
(Pd) Power Dissipation
  • 63 W
(RDS(on)) Drain-Source Resistance Max.
  • 600 mOhm 
(Qg) Gate Charge
  • 13 nC

Documents

EOL_PDN24001rev0_EN.pdf