TSM5NC50CP ROG

Taiwan Semiconductor SMD/SMT Power MOSFET N-Channel 5A 83W 1.380mOhm  TO-252 (DPAK)

TSM5NC50CP
Manufacturer Part No.
TSM5NC50CP ROG
Schukat Part No.
TSM5NC50CP
Enter your company's part number here. Your part number will be referenced on your receipts, such as the order confirmation, invoice or delivery note.
Enter your personal project number here to assign the item to a project. Your part project number will be referenced on your receipts, such as the order confirmation, invoice or delivery note.

5.000 Pcs. in stock

Planned delivery time
---
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between: • Active (green) • NRND = Not Recommended for New Designs (yellow) • LTB = Last Time Buy (yellow) • EOL = End of Life (red)
EOL 19.01.2024
Discontinued by manufacturer without replacement
Replacement / Follow-up View entire series
Data Sheet
ECAD Model
Downloads
Manufacturer bundle 2500 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.

Quantity and Options

(at least 10 or multiple of 10)
All prices net plus VAT. We do not deliver to private customers.

Fact Sheet

Number of Channels
1
Polarity
N-Channel
(Id) Continuous Drain Current
5 A
(Pd) Power Dissipation
83 W
(RDS(on)) Drain-Source Resistance Max.
1,380 mOhm 
Manufacturer Package
TO-252 (DPAK)
RoHS-Conform

Specifications

Close all

General

Manufacturer
  • Taiwan Semiconductor
Type
  • Power MOSFET
Series
  • TSM_CP
Product group
  • U8380
Packaging
  • Reel
Assembly Type
  • SMD/SMT
Pin Count
  • 3
Manufacturer Package
  • TO-252 (DPAK)

Operating conditions

Barrier Layer temperature, min. (TJ)
  • -55 °C
Barrier Layer Temperature, max. (TJ)
  • 150 °C
Storage Temperature Min.
  • -55 °C
Storage Temperature Max.
  • 150 °C

Electrical Properties

(Uds) Max. Drain-Source Voltage
  • 500 V
(Id) Continuous Drain Current
  • 5 A
(Ugs) Gate-Source Voltage
  • 30 V
Number of Channels
  • 1
Polarity
  • N-Channel
(Pd) Power Dissipation
  • 83 W
(RDS(on)) Drain-Source Resistance Max.
  • 1,380 mOhm 
(Qg) Gate Charge
  • 15 nC

Documents

EOL_PDN24001rev0_EN.pdf