TSM220NB06LCR RLG
Taiwan Semiconductor SMD/SMT Power MOSFET N-Channel 35A 68W 28mOhm PDFN56-8
Manufacturer Part No.
TSM220NB06LCR RLG
Schukat Part No.
TSM220NB06LCR
Manufacturer
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Planned delivery time
--- Life Cycle Status
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• Active (green)
• NRND = Not Recommended for New Designs (yellow)
• LTB = Last Time Buy (yellow)
• EOL = End of Life (red)
EOL 19.08.2024
Article discontinued
Data Sheet
ECAD Model
Prices
Manufacturer bundle 2500 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.
Quantity and Options
(at least 25 or multiple of 25)
All prices net plus VAT. We do not deliver to private customers.
Fact Sheet
- Number of Channels
- 1
- Polarity
- N-Channel
- (Id) Continuous Drain Current
- 35 A
- (Pd) Power Dissipation
- 68 W
- (RDS(on)) Drain-Source Resistance Max.
- 28 mOhm
- Manufacturer Package
- PDFN56-8
- RoHS-Conform
Specifications
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Operating conditions
- Barrier Layer temperature, min. (TJ)
- -55 °C
- Barrier Layer Temperature, max. (TJ)
- 175 °C
- Storage Temperature Min.
- -55 °C
- Storage Temperature Max.
- 175 °C
Electrical Properties
- (Uds) Max. Drain-Source Voltage
- 60 V
- (Id) Continuous Drain Current
- 35 A
- (Ugs) Gate-Source Voltage
- 20 V
- Number of Channels
- 1
- Polarity
- N-Channel
- (Pd) Power Dissipation
- 68 W
- (RDS(on)) Drain-Source Resistance Max.
- 28 mOhm
- (Qg) Gate Charge
- 12 nC
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