TSM1NB60CW RPG
Taiwan Semiconductor SMD/SMT Power MOSFET N-Channel 1A 2,1W 10.000mOhm SOT-223
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EOL 04.09.2023
Article discontinued
Data Sheet
ECAD Model
Prices
Manufacturer bundle 2500 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.
Quantity and Options
(at least 25 or multiple of 25)
All prices net plus VAT. We do not deliver to private customers.
Fact Sheet
- Number of Channels
- 1
- Polarity
- N-Channel
- (Id) Continuous Drain Current
- 1 A
1 A - (Pd) Power Dissipation
- 2.1 W
- (RDS(on)) Drain-Source Resistance Max.
- 10,000 mOhm
- Manufacturer Package
- SOT-223
- RoHS-Conform
Specifications
Open all
Operating conditions
- Operating Temperature Min.
- -55 °C
- Operating Temperature Max.
- 150 °C
- Storage Temperature Min.
- -55 °C
- Storage Temperature Max.
- 150 °C
Electrical Properties
- (Uds) Max. Drain-Source Voltage
- 600 V
- 600 V
- (Uds) Max. Drain-Source Voltage Q1
- 600 V
- (Id) Continuous Drain Current
- 1 A
- 1 A
- (Id) Continuous Drain Current Q1
- 1 A
- (Ugs) Gate-Source Voltage
- 30 V
- 30 V
- (Ugs) Gate-source voltage Q1
- 30 V
- Number of Channels
- 1
- Polarity
- N-Channel
- (Pd) Power Dissipation
- 2.1 W
- (RDS(on)) Drain-Source Resistance Max.
- 10,000 mOhm
- (Qg) Gate Charge Q1
- 6.1 nC
- (Qg) Gate Charge
- 6,1 nC
- 6,1 nC
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