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TSM150NB04DCR RLG

Taiwan Semiconductor SMD/SMT Power MOSFET N-Channel 38A 40W 28,6mOhm  PDFN56-8

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Manufacturer Part No.
TSM150NB04DCR RLG
Schukat Part No.
TSM150NB04DCR
Manufacturer
Taiwan Semiconductor
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2.450 Pcs. in stock

Planned delivery time
Ø 21 Weeks
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between: • Active (green) • NRND = Not Recommended for New Designs (yellow) • LTB = Last Time Buy (yellow) • EOL = End of Life (red)
Active
Available (from stock)
Replacement / Follow-up View entire series
Data Sheet
Open PDF
ECAD Model
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Prices

Manufacturer bundle 2500 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.

Quantity and Options

(at least 25 or multiple of 25)
All prices net plus VAT. We do not deliver to private customers.

Fact Sheet

Number of Channels
2
Polarity
N-Channel
(Id) Continuous Drain Current
38 A
38 A
(Pd) Power Dissipation
40 W
(RDS(on)) Drain-Source Widerstand max.
28.6 mOhm 
Manufacturer Package
PDFN56-8
RoHS-Conform

Specifications

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General

Manufacturer
  • Taiwan Semiconductor
Type
  • Power MOSFET
Series
  • TSM_CR(H)
Product group
  • U8764 TSC SMD Power MOSFETs TSM_CR(H) PDFN56
Packaging
  • Reel
Assembly Type
  • SMD/SMT
Pin Count
  • 8
Manufacturer Package
  • PDFN56-8

Operating conditions

Operating Temperature Min.
  • -55 °C
Operating Temperature Max.
  • 150 °C
Storage Temperature Min.
  • -55 °C
Storage Temperature Max.
  • 150 °C

Electrical properties

(Uds) Max. Drain-Source Voltage Q2
  • 40 V
(Uds) Max. Drain-Source Voltage
  • 40 V
  • 40 V
(Id) Continuous Drain Current Q2
  • 38 A
(Id) Continuous Drain Current
  • 38 A
  • 38 A
(Ugs) Gate-Source Voltage Q2
  • 20 V
(Ugs) Gate-Source Voltage
  • 20 V
  • 20 V
Number of Channels
  • 2
Polarity
  • N-Channel
(Pd) Power Dissipation
  • 40 W
(RDS(on)) Drain-Source Widerstand max.
  • 28.6 mOhm 
(Qg) Gate Charge Q1
  • 18 nC
(Qg) Gate Charge
  • 18 nC
  • 18 nC