TSM110NB04LCR RLG

Taiwan Semiconductor SMD/SMT Power MOSFET N-Channel 54A 68W 16mOhm  PDFN56-8

Image similar
Manufacturer Part No.
TSM110NB04LCR RLG
Schukat Part No.
TSM110NB04LCR
Enter your company's part number here. Your part number will be referenced on your receipts, such as the order confirmation, invoice or delivery note.
Enter your personal project number here to assign the item to a project. Your part project number will be referenced on your receipts, such as the order confirmation, invoice or delivery note.

2.050 Pcs. in stock

Planned delivery time
Ø 21 Weeks
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between: • Active (green) • NRND = Not Recommended for New Designs (yellow) • LTB = Last Time Buy (yellow) • EOL = End of Life (red)
Active
Available (from stock)
Replacement / Follow-up View entire series
Data Sheet
ECAD Model
Downloads

Prices

Manufacturer bundle 2500 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.

Quantity and Options

(at least 25 or multiple of 25)
All prices net plus VAT. We do not deliver to private customers.

Fact Sheet

Number of Channels
1
Polarity
N-Channel
(Id) Continuous Drain Current
54 A
54 A
(Pd) Power Dissipation
68 W
(RDS(on)) Drain-Source Widerstand max.
16 mOhm 
Manufacturer Package
PDFN56-8
RoHS-Conform

Specifications

Open all

General

Manufacturer
  • Taiwan Semiconductor
Type
  • Power MOSFET
Series
  • TSM_CR(H)
Product group
  • U8764 TSC SMD Power MOSFETs TSM_CR(H) PDFN56
Packaging
  • Reel
Assembly Type
  • SMD/SMT
Pin Count
  • 8
Manufacturer Package
  • PDFN56-8

Operating conditions

Operating Temperature Min.
  • -55 °C
Operating Temperature Max.
  • 175 °C
Storage Temperature Min.
  • -55 °C
Storage Temperature Max.
  • 175 °C

Electrical properties

(Uds) Max. Drain-Source Voltage Q1
  • 40 V
(Uds) Max. Drain-Source Voltage
  • 40 V
  • 40 V
(Id) Continuous Drain Current Q1
  • 54 A
(Id) Continuous Drain Current
  • 54 A
  • 54 A
(Ugs) Gate-Source Voltage Q1
  • 20 V V
(Ugs) Gate-Source Voltage
  • 20 V
  • 20 V
Number of Channels
  • 1
Polarity
  • N-Channel
(Pd) Power Dissipation
  • 68 W
(RDS(on)) Drain-Source Widerstand max.
  • 16 mOhm 
(Qg) Gate Charge Q1
  • 12 nC
(Qg) Gate Charge
  • 12 nC
  • 12 nC