TSM110NB04DCR RLG
Taiwan Semiconductor SMD/SMT Power MOSFET N-Channel 48A 48W 17,2mOhm PDFN56-8
Manufacturer Part No.
TSM110NB04DCR RLG
Schukat Part No.
TSM110NB04DCR
Manufacturer
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2.250 Pcs. in stock
Planned delivery time
Ø 20 Weeks
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between:
• Active (green)
• NRND = Not Recommended for New Designs (yellow)
• LTB = Last Time Buy (yellow)
• EOL = End of Life (red)
Active
Available (from stock)
Data Sheet
ECAD Model
Prices
Manufacturer bundle 2500 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.
Quantity and Options
(at least 25 or multiple of 25)
All prices net plus VAT. We do not deliver to private customers.
Fact Sheet
- Number of Channels
- 2
- Polarity
- N-Channel
- (Id) Continuous Drain Current
- 48 A
- (Pd) Power Dissipation
- 48 W
- (RDS(on)) Drain-Source Resistance Max.
- 17.2 mOhm
- Manufacturer Package
- PDFN56-8
- RoHS-Conform
Specifications
Open all
Operating conditions
- Barrier Layer temperature, min. (TJ)
- -55 °C
- Barrier Layer Temperature, max. (TJ)
- 150 °C
- Storage Temperature Min.
- -55 °C
- Storage Temperature Max.
- 150 °C
Electrical Properties
- (Uds) Max. Drain-Source Voltage
- 40 V
- (Id) Continuous Drain Current
- 48 A
- (Ugs) Gate-Source Voltage
- 20 V
- (Ugs th) Gate-Source Threshold Voltage
- 2,9 V
- Number of Channels
- 2
- Polarity
- N-Channel
- (Pd) Power Dissipation
- 48 W
- (RDS(on)) Drain-Source Resistance Max.
- 17.2 mOhm
- (Qg) Gate Charge
- 25 nC