TSM089N08LCR RLG
Taiwan Semiconductor SMD/SMT Power MOSFET N-Channel 67A 83W 11mOhm PDFN56-8
Manufacturer Part No.
TSM089N08LCR RLG
Schukat Part No.
TSM089N08LCR
Manufacturer
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2.400 Pcs. in stock
Planned delivery time
Ø 29 Weeks
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between:
• Active (green)
• NRND = Not Recommended for New Designs (yellow)
• LTB = Last Time Buy (yellow)
• EOL = End of Life (red)
Active
Available (from stock)
Data Sheet
ECAD Model
Prices
Manufacturer bundle 2500 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.
Quantity and Options
(at least 25 or multiple of 25)
All prices net plus VAT. We do not deliver to private customers.
Fact Sheet
- Number of Channels
- 1
- Polarity
- N-Channel
- (Id) Continuous Drain Current
- 67 A
67 A - (Pd) Power Dissipation
- 83 W
- (RDS(on)) Drain-Source Widerstand max.
- 11 mOhm
- Manufacturer Package
- PDFN56-8
- RoHS-Conform
Specifications
Open all
Operating conditions
- Operating Temperature Min.
- -55 °C
- Operating Temperature Max.
- 150 °C
- Storage Temperature Min.
- -55 °C
- Storage Temperature Max.
- 150 °C
Electrical properties
- (Uds) Max. Drain-Source Voltage Q1
- 80 V
- (Uds) Max. Drain-Source Voltage
- 80 V
- 80 V
- (Id) Continuous Drain Current Q1
- 67 A
- (Id) Continuous Drain Current
- 67 A
- 67 A
- (Ugs) Gate-Source Voltage Q1
- 20 V V
- (Ugs) Gate-Source Voltage
- 20 V
- 20 V
- Number of Channels
- 1
- Polarity
- N-Channel
- (Pd) Power Dissipation
- 83 W
- (RDS(on)) Drain-Source Widerstand max.
- 11 mOhm
- (Qg) Gate Charge Q1
- 45 nC
- (Qg) Gate Charge
- 45 nC
- 45 nC