TSM051N04LCP ROG

Taiwan Semiconductor SMD/SMT Power MOSFET N-Channel 96A 89W 7mOhm  TO-252 (DPAK)

TSM051N04LCP
Manufacturer Part No.
TSM051N04LCP ROG
Schukat Part No.
TSM051N04LCP
Enter your company's part number here. Your part number will be referenced on your receipts, such as the order confirmation, invoice or delivery note.
Enter your personal project number here to assign the item to a project. Your part project number will be referenced on your receipts, such as the order confirmation, invoice or delivery note.

3.025 Pcs. in stock

Planned delivery time
---
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between: • Active (green) • NRND = Not Recommended for New Designs (yellow) • LTB = Last Time Buy (yellow) • EOL = End of Life (red)
EOL 11.03.2025
Discontinued by manufacturer without replacement
Replacement / Follow-up View entire series
Data Sheet
ECAD Model
Downloads

Prices

Manufacturer bundle 2500 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.

Quantity and Options

(at least 25 or multiple of 25)
All prices net plus VAT. We do not deliver to private customers.

Fact Sheet

Number of Channels
1
Polarity
N-Channel
(Id) Continuous Drain Current
96 A
(Pd) Power Dissipation
89 W
(RDS(on)) Drain-Source Resistance Max.
7 mOhm 
Manufacturer Package
TO-252 (DPAK)
RoHS-Conform

Specifications

Open all

General

Manufacturer
  • Taiwan Semiconductor
Type
  • Power MOSFET
Series
  • TSM051N
Product group
  • U8767
Packaging
  • Reel
Assembly Type
  • SMD/SMT
Pin Count
  • 3
Manufacturer Package
  • TO-252 (DPAK)

Operating conditions

Barrier Layer temperature, min. (TJ)
  • -55 °C
Barrier Layer Temperature, max. (TJ)
  • 150 °C
Storage Temperature Min.
  • -55 °C
Storage Temperature Max.
  • 150 °C

Electrical Properties

(Uds) Max. Drain-Source Voltage
  • 40 V
(Id) Continuous Drain Current
  • 96 A
(Ugs) Gate-Source Voltage
  • 20 V
Number of Channels
  • 1
Polarity
  • N-Channel
(Pd) Power Dissipation
  • 89 W
(RDS(on)) Drain-Source Resistance Max.
  • 7 mOhm 
(Qg) Gate Charge
  • 22,6 nC

Documents

EOL_25001 rev0_EN.pdf