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TSG65N190CR RVG

Taiwan Semiconductor SMD/SMT E-mode GaN Transistor N-Channel 11A 190mOhm  PDFN-56

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Manufacturer Part No.
TSG65N190CR RVG
Schukat Part No.
TSG65N190CR RVG
Manufacturer
Taiwan Semiconductor
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0 Pcs. in stock

Back Order
9.000 Pcs.
Planned delivery time
Ø 35 Weeks
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between: • Active (green) • NRND = Not Recommended for New Designs (yellow) • LTB = Last Time Buy (yellow) • EOL = End of Life (red)
Active
Available on order
Replacement / Follow-up View entire series
Data Sheet
Open PDF
ECAD Model
Downloads

Prices

Manufacturer bundle 3000 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.

Quantity and Options

(at least 9000 or multiple of 3000)
All prices net plus VAT. We do not deliver to private customers.

Fact Sheet

Number of Channels
1
Polarity
N-Channel
(Id) Continuous Drain Current
11 A
11 A
(RDS(on)) Drain-Source Widerstand max.
190 mOhm 
Manufacturer Package
PDFN-56
RoHS-Conform

Specifications

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General

Manufacturer
  • Taiwan Semiconductor
Type
  • E-mode GaN Transistor
Series
  • TSG65N_
Product group
  • U8771 TSC SMD Power MOSFETs E-mode GaN
Packaging
  • Reel
Assembly Type
  • SMD/SMT
Pin Count
  • 8
Manufacturer Package
  • PDFN-56

Operating conditions

Operating Temperature Min.
  • -55 °C
Operating Temperature Max.
  • 150 °C
Storage Temperature Min.
  • -55 °C
Storage Temperature Max.
  • 150 °C

Electrical properties

(Uds) Max. Drain-Source Voltage Q1
  • 650 V
(Uds) Max. Drain-Source Voltage
  • 650 V
  • 650 V
(Id) Continuous Drain Current Q1
  • 11 A
(Id) Continuous Drain Current
  • 11 A
  • 11 A
(Ugs) Gate-Source Voltage Q1
  • -10V to 7V V
(Ugs) Gate-Source Voltage
  • -10V to 7V
  • -10V to 7V
Number of Channels
  • 1
Polarity
  • N-Channel
(RDS(on)) Drain-Source Widerstand max.
  • 190 mOhm 
(Qg) Gate Charge Q1
  • 2.2 nC
(Qg) Gate Charge
  • 2,2 nC
  • 2,2 nC