TQM150NB04DCR RLG
Taiwan Semiconductor SMD/SMT Power MOSFET N-Channel 39A 48W 28,6mOhm PDFN56U Dual AEC-Q101
Manufacturer Part No.
TQM150NB04DCR RLG
Schukat Part No.
TQM150NB04DCR RLG
Manufacturer
Enter your company's part number here. Your part number will be referenced on your receipts, such as the order confirmation, invoice or delivery note.
Enter your personal project number here to assign the item to a project. Your part project number will be referenced on your receipts, such as the order confirmation, invoice or delivery note.
0 Pcs. in stock
Planned delivery time
Ø 28 Weeks
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between:
• Active (green)
• NRND = Not Recommended for New Designs (yellow)
• LTB = Last Time Buy (yellow)
• EOL = End of Life (red)
Active
Available on order
Data Sheet
ECAD Model
Prices
Manufacturer bundle 2500 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.
Quantity and Options
(at least 5000 or multiple of 2500)
All prices net plus VAT. We do not deliver to private customers.
Fact Sheet
- Number of Channels
- 2
- Polarity
- N-Channel
- (Id) Continuous Drain Current
- 39 A
- (Pd) Power Dissipation
- 48 W
- (RDS(on)) Drain-Source Resistance Max.
- 28.6 mOhm
- Manufacturer Package
- PDFN56U Dual
- RoHS-Conform
Specifications
Open all
Operating conditions
- Barrier Layer temperature, min. (TJ)
- -55 °C
- Barrier Layer Temperature, max. (TJ)
- 175 °C
- Storage Temperature Min.
- -55 °C
- Storage Temperature Max.
- 175 °C
Electrical Properties
- (Uds) Max. Drain-Source Voltage
- 40 V
- (Id) Continuous Drain Current
- 39 A
- (Ugs) Gate-Source Voltage
- 20 V
- (Ugs th) Gate-Source Threshold Voltage
- 2,8 V
- Number of Channels
- 2
- Polarity
- N-Channel
- (Pd) Power Dissipation
- 48 W
- (RDS(on)) Drain-Source Resistance Max.
- 28.6 mOhm
- (Qg) Gate Charge
- 18 nC
Safety/Certifications
- Qualification
- AEC-Q101