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TQM110NB04DCR RLG

Taiwan Semiconductor SMD/SMT Power MOSFET N-Channel 50A 58W 11mOhm  PDFN56U Dual AEC-Q101

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Manufacturer Part No.
TQM110NB04DCR RLG
Schukat Part No.
TQM110NB04DCR RLG
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5.000 Pcs. in stock

Planned delivery time
Ø 25 Weeks
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between: • Active (green) • NRND = Not Recommended for New Designs (yellow) • LTB = Last Time Buy (yellow) • EOL = End of Life (red)
Active
Available (from stock)
Replacement / Follow-up View entire series
Data Sheet
ECAD Model
Downloads

Prices

Manufacturer bundle 2500 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.

Quantity and Options

(at least 25 or multiple of 25)
All prices net plus VAT. We do not deliver to private customers.

Fact Sheet

Number of Channels
2
Polarity
N-Channel
(Id) Continuous Drain Current
50 A
50 A
(Pd) Power Dissipation
58 W
(RDS(on)) Drain-Source Widerstand max.
11 mOhm 
Manufacturer Package
PDFN56U Dual
RoHS-Conform

Specifications

Open all

General

Manufacturer
  • Taiwan Semiconductor
Type
  • Power MOSFET
Series
  • TQM110NB_
Packaging
  • Reel
Assembly Type
  • SMD/SMT
Pin Count
  • 8
Manufacturer Package
  • PDFN56U Dual

Operating conditions

Operating Temperature Min.
  • -55 °C
Operating Temperature Max.
  • 175 °C

Electrical properties

(Uds) Max. Drain-Source Voltage Q1
  • 40 V
(Uds) Max. Drain-Source Voltage
  • 40 V
  • 40 V
(Id) Continuous Drain Current Q1
  • 50 A
(Id) Continuous Drain Current
  • 50 A
  • 50 A
(Ugs) Gate-Source Voltage Q1
  • 20 V V
(Ugs) Gate-Source Voltage
  • 20 V
  • 20 V
(Ugs th) Gate-Source Threshold Voltage Q1
  • 2.5 V
(Ugs th) Gate-Source Threshold Voltage
  • 2,5 V
  • 2,5 V
Number of Channels
  • 2
Polarity
  • N-Channel
(Pd) Power Dissipation
  • 58 W
(RDS(on)) Drain-Source Widerstand max.
  • 11 mOhm 
(Qg) Gate Charge Q1
  • 26 nC
(Qg) Gate Charge
  • 26 nC
  • 26 nC

Safety/Certifications

Qualification
  • AEC-Q101