BAV20 R0G
Taiwan Semiconductor THT Si Standard Diode 200V 1,25V 200mA DO-35
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8.000 Pcs. in stock
Planned delivery time
Ø 23 Weeks
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between:
• Active (green)
• NRND = Not Recommended for New Designs (yellow)
• LTB = Last Time Buy (yellow)
• EOL = End of Life (red)
Active
Available (from stock)
Data Sheet
ECAD Model
Prices
Manufacturer bundle 10000 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.
Quantity and Options
(at least 1000 or multiple of 1000)
All prices net plus VAT. We do not deliver to private customers.
Fact Sheet
- (Uf) Forward Voltage
- 1.25 V
- (If) Forward Current
- 200 mA
- Peak Let-Through Surrent Max.
- 4,000 mA
- (Ur) Reverse Voltage
- 150 V
- RoHS-Conform
Specifications
Open all
Operating conditions
- Operating Temperature Min.
- -55 °C
- Operating Temperature Max.
- 175 °C
- Storage Temperature Min.
- -55 °C
- Storage Temperature Max.
- 175 °C
Electrical properties
- (Uf) Forward Voltage
- 1.25 V
- (If) Forward Current
- 200 mA
- Peak Let-Through Surrent Max.
- 4,000 mA
- (Urrm) Peak Recurrent Reverse Voltage Max.
- 200 V
- (Ur) Reverse Voltage
- 150 V
- (Ir) Reverse Current
- 100 nA
- (Pd) Power Dissipation
- 0.41 W
- Reset Time
- 50 ns