VNB20N07TR-E

STMicroelectronics SMD/SMT Power MOSFET N-Channel 20A 83W 70mOhm  TO-263 (D2PAK)

VNB20N07TR-E
Manufacturer Part No.
VNB20N07TR-E
Schukat Part No.
VNB20N07TR-E
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Item no longer available!

Planned delivery time
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Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between: • Active (green) • NRND = Not Recommended for New Designs (yellow) • LTB = Last Time Buy (yellow) • EOL = End of Life (red)
EOL 26.06.2025
Article discontinued
Replacement / Follow-up View entire series
Data Sheet
ECAD Model
Downloads

Prices

Manufacturer bundle Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.

Quantity and Options

(at least 1000 or multiple of 1000)
All prices net plus VAT. We do not deliver to private customers.

Fact Sheet

Number of Channels
1
Polarity
N-Channel
(Id) Continuous Drain Current
20 A
20 A
(Pd) Power Dissipation
83 W
(RDS(on)) Drain-Source Resistance Max.
70 mOhm 
Manufacturer Package
TO-263 (D2PAK)
RoHS-Conform

Specifications

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General

Manufacturer
  • STMicroelectronics
Type
  • Power MOSFET
Series
  • VNB20N
Product group
  • U8747
  • U8747
Packaging
  • Reel
Assembly Type
  • SMD/SMT
Manufacturer Package
  • TO-263 (D2PAK)

Operating conditions

Operating Temperature Min.
  • -55 °C
Operating Temperature Max.
  • 150 °C
Storage Temperature Min.
  • -55 °C
Storage Temperature Max.
  • 150 °C

Electrical Properties

(Uds) Max. Drain-Source Voltage
  • 70 V
  • 70 V
(Uds) Max. Drain-Source Voltage Q1
  • 70 V
(Id) Continuous Drain Current
  • 20 A
  • 20 A
(Id) Continuous Drain Current Q1
  • 20 A
(Ugs th) Gate-Source Threshold Voltage
  • 0,8 V
  • 0,8 V
(Ugs th) Gate-Source Threshold Voltage Q1
  • 0.8 V
Number of Channels
  • 1
Polarity
  • N-Channel
(Pd) Power Dissipation
  • 83 W
(RDS(on)) Drain-Source Resistance Max.
  • 70 mOhm 

Documents

PCN_CRP_24_13125_EN.pdf
PCN_CRP_24_13832_EN.pdf