STB25N80K5

STMicroelectronics SMD/SMT Power MOSFET N-Channel 19,5A 250W 260mOhm  TO-263 (D2PAK)

Image similar
Manufacturer Part No.
STB25N80K5
Schukat Part No.
STB25N80K5
Enter your company's part number here. Your part number will be referenced on your receipts, such as the order confirmation, invoice or delivery note.
Enter your personal project number here to assign the item to a project. Your part project number will be referenced on your receipts, such as the order confirmation, invoice or delivery note.

0 Pcs. in stock

Planned delivery time
Ø 30 Weeks
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between: • Active (green) • NRND = Not Recommended for New Designs (yellow) • LTB = Last Time Buy (yellow) • EOL = End of Life (red)
Active
Available on order
Replacement / Follow-up View entire series
Data Sheet
ECAD Model
Downloads

Prices

Manufacturer bundle 1000 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.

Quantity and Options

(at least 1000 or multiple of 1000)
All prices net plus VAT. We do not deliver to private customers.

Fact Sheet

Number of Channels
1
Polarity
N-Channel
(Id) Continuous Drain Current
19,5 A
19,5 A
(Pd) Power Dissipation
250 W
(RDS(on)) Drain-Source Widerstand max.
260 mOhm 
Manufacturer Package
TO-263 (D2PAK)
RoHS-Conform

Specifications

Open all

General

Manufacturer
  • STMicroelectronics
Type
  • Power MOSFET
Series
  • STB25N
Product group
  • U8746 STM SMD Power MOSFETs taped STB_ D²Pak
Packaging
  • Reel
Assembly Type
  • SMD/SMT
Pin Count
  • 3
Manufacturer Package
  • TO-263 (D2PAK)

Operating conditions

Operating Temperature Min.
  • -55 °C
Operating Temperature Max.
  • 150 °C
Storage Temperature Min.
  • -55 °C
Storage Temperature Max.
  • 150 °C

Electrical properties

(Uds) Max. Drain-Source Voltage Q1
  • 800 V
(Uds) Max. Drain-Source Voltage
  • 800 V
  • 800 V
(Id) Continuous Drain Current Q1
  • 19.5 A
(Id) Continuous Drain Current
  • 19,5 A
  • 19,5 A
(Ugs) Gate-Source Voltage Q1
  • 30 V V
(Ugs) Gate-Source Voltage
  • 30 V
  • 30 V
Number of Channels
  • 1
Polarity
  • N-Channel
(Pd) Power Dissipation
  • 250 W
(RDS(on)) Drain-Source Widerstand max.
  • 260 mOhm