STB13N60M2

STMicroelectronics SMD/SMT Power MOSFET N-Channel 11A 110W 380mOhm  TO-263 (D2PAK)

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Manufacturer Part No.
STB13N60M2
Schukat Part No.
STB13N60M2
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955 Pcs. in stock

Planned delivery time
Ø 50 Weeks
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between: • Active (green) • NRND = Not Recommended for New Designs (yellow) • LTB = Last Time Buy (yellow) • EOL = End of Life (red)
Active
Available (from stock)
Replacement / Follow-up View entire series
Data Sheet
ECAD Model
Downloads

Prices

Manufacturer bundle 1000 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.

Quantity and Options

(at least 5 or multiple of 5)
All prices net plus VAT. We do not deliver to private customers.

Fact Sheet

Number of Channels
1
Polarity
N-Channel
(Id) Continuous Drain Current
11 A
11 A
(Pd) Power Dissipation
110 W
(RDS(on)) Drain-Source Widerstand max.
380 mOhm 
Manufacturer Package
TO-263 (D2PAK)
RoHS-Conform

Specifications

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General

Manufacturer
  • STMicroelectronics
Type
  • Power MOSFET
Series
  • STB_
Product group
  • U8746 STM SMD Power MOSFETs taped STB_ D²Pak
Packaging
  • Reel
Assembly Type
  • SMD/SMT
Pin Count
  • 3
Manufacturer Package
  • TO-263 (D2PAK)

Operating conditions

Operating Temperature Min.
  • -55 °C
Operating Temperature Max.
  • 150 °C
Storage Temperature Min.
  • -55 °C
Storage Temperature Max.
  • 150 °C

Electrical properties

(Uds) Max. Drain-Source Voltage Q1
  • 650 V
(Uds) Max. Drain-Source Voltage
  • 650 V
  • 650 V
(Id) Continuous Drain Current Q1
  • 11 A
(Id) Continuous Drain Current
  • 11 A
  • 11 A
(Ugs) Gate-Source Voltage Q1
  • 25 V V
(Ugs) Gate-Source Voltage
  • 25 V
  • 25 V
Number of Channels
  • 1
Polarity
  • N-Channel
(Pd) Power Dissipation
  • 110 W
(RDS(on)) Drain-Source Widerstand max.
  • 380 mOhm