STB120NF10T4
STMicroelectronics SMD/SMT Power MOSFET N-Channel 110A 312W 10,5mOhm TO-263 (D2PAK)
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0 Pcs. in stock
Planned delivery time
Ø 13 Weeks
Life Cycle Status
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• Active (green)
• NRND = Not Recommended for New Designs (yellow)
• LTB = Last Time Buy (yellow)
• EOL = End of Life (red)
Active
Available on order
Data Sheet
ECAD Model
Prices
Manufacturer bundle 1000 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.
Quantity and Options
(at least 1000 or multiple of 1000)
All prices net plus VAT. We do not deliver to private customers.
Fact Sheet
- Number of Channels
- 1
- Polarity
- N-Channel
- (Id) Continuous Drain Current
- 110 A
- (Pd) Power Dissipation
- 312 W
- (RDS(on)) Drain-Source Resistance Max.
- 10.5 mOhm
- Manufacturer Package
- TO-263 (D2PAK)
- RoHS-Conform
Specifications
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Operating conditions
- Barrier Layer temperature, min. (TJ)
- -55 °C
- Barrier Layer Temperature, max. (TJ)
- 175 °C
- Storage Temperature Min.
- -55 °C
- Storage Temperature Max.
- 175 °C
Electrical Properties
- (Uds) Max. Drain-Source Voltage
- 100 V
- (Id) Continuous Drain Current
- 110 A
- (Ugs) Gate-Source Voltage
- 20 V
- Number of Channels
- 1
- Polarity
- N-Channel
- (Pd) Power Dissipation
- 312 W
- (RDS(on)) Drain-Source Resistance Max.
- 10.5 mOhm
Documents
PCN_CRP_24_13832_EN.pdf