SCT3160KLGC11

Rohm THT SiC Power MOSFET N-Channel 17A 103W 208mOhm  TO-247

SCT3160KLGC11
Manufacturer Part No.
SCT3160KLGC11
Schukat Part No.
SCT3160KLGC11
Manufacturer
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Planned delivery time
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Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between: • Active (green) • NRND = Not Recommended for New Designs (yellow) • LTB = Last Time Buy (yellow) • EOL = End of Life (red)
EOL 29.01.2026
Article discontinued
Replacement / Follow-up View entire series
Data Sheet
ECAD Model
Downloads

Prices

Manufacturer bundle 30 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.

Quantity and Options

(at least 1 or multiple of 1)
All prices net plus VAT. We do not deliver to private customers.

Fact Sheet

Number of Channels
1
Polarity
N-Channel
(Id) Continuous Drain Current
17 A
17 A
(Pd) Power Dissipation
103 W
(RDS(on)) Drain-Source Resistance Max.
208 mOhm 
Manufacturer Package
TO-247
RoHS-Conform

Specifications

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General

Manufacturer
  • Rohm
Type
  • SiC Power MOSFET
Series
  • SCT_
Product group
  • U8486
  • U8486
Packaging
  • Tube
Assembly Type
  • THT
Pin Count
  • 3
Manufacturer Package
  • TO-247
Features
  • • Revolutionary semiconductor material SiC
    • Low on-resistance
    • Fast switching speed
    • Fast reverse recovery
    • Easy to parallel

Operating conditions

Barrier Layer Temperature, max. (TJ)
  • 175 °C
Storage Temperature Min.
  • -55 °C
Storage Temperature Max.
  • 175 °C

Electrical Properties

(Uds) Max. Drain-Source Voltage
  • 1.200 V
  • 1.200 V
(Uds) Max. Drain-Source Voltage Q1
  • 1,200 V
(Id) Continuous Drain Current
  • 17 A
  • 17 A
(Id) Continuous Drain Current Q1
  • 17 A
(Ugs) Gate-Source Voltage
  • 22 V
  • 22 V
(Ugs) Gate-source voltage Q1
  • 22 V
Number of Channels
  • 1
Polarity
  • N-Channel
(Pd) Power Dissipation
  • 103 W
(RDS(on)) Drain-Source Resistance Max.
  • 208 mOhm