SCT3022KLGC11
Rohm THT SiC Power MOSFET N-Channel 95A 427W 28,6mOhm TO-247
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EOL 29.01.2026
Article discontinued
Data Sheet
ECAD Model
Prices
Manufacturer bundle 30 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.
Quantity and Options
(at least 1 or multiple of 1)
All prices net plus VAT. We do not deliver to private customers.
Fact Sheet
- Number of Channels
- 1
- Polarity
- N-Channel
- (Id) Continuous Drain Current
- 95 A
95 A - (Pd) Power Dissipation
- 427 W
- (RDS(on)) Drain-Source Resistance Max.
- 28.6 mOhm
- Manufacturer Package
- TO-247
- RoHS-Conform
Specifications
Open all
Operating conditions
- Barrier Layer Temperature, max. (TJ)
- 175 °C
- Storage Temperature Min.
- -55 °C
- Storage Temperature Max.
- 175 °C
Electrical Properties
- (Uds) Max. Drain-Source Voltage
- 1.200 V
- 1.200 V
- (Uds) Max. Drain-Source Voltage Q1
- 1,200 V
- (Id) Continuous Drain Current
- 95 A
- 95 A
- (Id) Continuous Drain Current Q1
- 95 A
- (Ugs) Gate-Source Voltage
- 22 V
- 22 V
- (Ugs) Gate-source voltage Q1
- 22 V
- Number of Channels
- 1
- Polarity
- N-Channel
- (Pd) Power Dissipation
- 427 W
- (RDS(on)) Drain-Source Resistance Max.
- 28.6 mOhm
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