SCT2120AFC

Rohm THT SiC Power MOSFET N-Channel 29A 165W 156mOhm  TO-220AB

Image similar
Manufacturer Part No.
SCT2120AFC
Schukat Part No.
SCT2120AFC
Manufacturer
Enter your company's part number here. Your part number will be referenced on your receipts, such as the order confirmation, invoice or delivery note.
Enter your personal project number here to assign the item to a project. Your part project number will be referenced on your receipts, such as the order confirmation, invoice or delivery note.

0 Pcs. in stock

Planned delivery time
Ø 44 Weeks
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between: • Active (green) • NRND = Not Recommended for New Designs (yellow) • LTB = Last Time Buy (yellow) • EOL = End of Life (red)
Active
Available on order
Replacement / Follow-up View entire series
Data Sheet
ECAD Model
Downloads

Prices

Manufacturer bundle 1000 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.

Quantity and Options

(at least 1000 or multiple of 1000)
All prices net plus VAT. We do not deliver to private customers.

Fact Sheet

Number of Channels
1
Polarity
N-Channel
(Id) Continuous Drain Current
29 A
29 A
(Pd) Power Dissipation
165 W
(RDS(on)) Drain-Source Widerstand max.
156 mOhm 
Manufacturer Package
TO-220AB
RoHS-Conform

Specifications

Open all

General

Manufacturer
  • Rohm
Type
  • SiC Power MOSFET
Series
  • SCT_
Product group
  • U8485 ROHM SiC Power MOSFETs SCT_ TO220AB
Packaging
  • Tube
Assembly Type
  • THT
Pin Count
  • 3
Manufacturer Package
  • TO-220AB
Features
  • • Revolutionary semiconductor material SiC
    • Low on-resistance
    • Fast switching speed
    • Fast reverse recovery
    • Easy to parallel

Operating conditions

Operating Temperature Min.
  • 0 °C
Operating Temperature Max.
  • 175 °C
Storage Temperature Min.
  • -55 °C
Storage Temperature Max.
  • 175 °C

Electrical properties

(Uds) Max. Drain-Source Voltage Q1
  • 650 V
(Uds) Max. Drain-Source Voltage
  • 650 V
  • 650 V
(Id) Continuous Drain Current Q1
  • 29 A
(Id) Continuous Drain Current
  • 29 A
  • 29 A
(Ugs) Gate-Source Voltage Q1
  • 22 V V
(Ugs) Gate-Source Voltage
  • 22 V
  • 22 V
Number of Channels
  • 1
Polarity
  • N-Channel
(Pd) Power Dissipation
  • 165 W
(RDS(on)) Drain-Source Widerstand max.
  • 156 mOhm