SCT2080KEGC11
Rohm THT SiC Power MOSFET N-Channel 40A 262W 117mOhm TO-247N
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0 Pcs. in stock
Planned delivery time
Ø 40 Weeks
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between:
• Active (green)
• NRND = Not Recommended for New Designs (yellow)
• LTB = Last Time Buy (yellow)
• EOL = End of Life (red)
Active
Available on order
Data Sheet
ECAD Model
Prices
Manufacturer bundle 30 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.
Quantity and Options
(at least 450 or multiple of 30)
All prices net plus VAT. We do not deliver to private customers.
Fact Sheet
- Number of Channels
- 1
- Polarity
- N-Channel
- (Id) Continuous Drain Current
- 40 A
- (Pd) Power Dissipation
- 262 W
- (RDS(on)) Drain-Source Resistance Max.
- 117 mOhm
- Manufacturer Package
- TO-247N
- RoHS-Conform
Specifications
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Operating conditions
- Barrier Layer Temperature, max. (TJ)
- 175 °C
- Storage Temperature Min.
- -55 °C
- Storage Temperature Max.
- 175 °C
Electrical Properties
- (Uds) Max. Drain-Source Voltage
- 1.200 V
- (Id) Continuous Drain Current
- 40 A
- (Ugs) Gate-Source Voltage
- 22 V
- Number of Channels
- 1
- Polarity
- N-Channel
- (Pd) Power Dissipation
- 262 W
- (RDS(on)) Drain-Source Resistance Max.
- 117 mOhm
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