BSM600D12P3G001
Rohm SiC Power MOSFET Module N-Channel 576A 2.450W 1.400mOhm G-Pack
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0 Pcs. in stock
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12 Pcs.
12 Pcs.
Planned delivery time
Ø 34 Weeks
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between:
• Active (green)
• NRND = Not Recommended for New Designs (yellow)
• LTB = Last Time Buy (yellow)
• EOL = End of Life (red)
Active
Available on order
Data Sheet
ECAD Model
Prices
Manufacturer bundle 4 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.
Quantity and Options
(at least 12 or multiple of 12)
All prices net plus VAT. We do not deliver to private customers.
Fact Sheet
- Number of Channels
- 2
- Polarity
- N-Channel
- (Id) Continuous Drain Current
- 576 A
576 A - (Pd) Power Dissipation
- 2,450 W
- (RDS(on)) Drain-Source Widerstand max.
- 1,400 mOhm
- Manufacturer Package
- G-Pack
- RoHS-Conform
Specifications
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Operating conditions
- Operating Temperature Min.
- -40 °C
- Operating Temperature Max.
- 150 °C
Electrical properties
- (Uds) Max. Drain-Source Voltage Q1
- 1,200 V
- (Uds) Max. Drain-Source Voltage
- 1.200 V
- 1.200 V
- (Id) Continuous Drain Current Q1
- 576 A
- (Id) Continuous Drain Current
- 576 A
- 576 A
- (Ugs) Gate-Source Voltage Q1
- 22 V V
- (Ugs) Gate-Source Voltage
- 22 V
- 22 V
- Number of Channels
- 2
- Polarity
- N-Channel
- (Pd) Power Dissipation
- 2,450 W
- (RDS(on)) Drain-Source Widerstand max.
- 1,400 mOhm