BSM300D12P2E001

Rohm SiC Power MOSFET Module N-Channel 300A 1.875W 1.600mOhm  E-Pack

Manufacturer Part No.
BSM300D12P2E001
Schukat Part No.
BSM300D12P2E001
Manufacturer
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4 Pcs. in stock

Planned delivery time
Ø 34 Weeks
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between: • Active (green) • NRND = Not Recommended for New Designs (yellow) • LTB = Last Time Buy (yellow) • EOL = End of Life (red)
Active
Available (from stock)
Replacement / Follow-up View entire series
Data Sheet
ECAD Model
Downloads

Prices

Manufacturer bundle 4 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.

Quantity and Options

(at least 1 or multiple of 1)
All prices net plus VAT. We do not deliver to private customers.

Fact Sheet

Number of Channels
2
Polarity
N-Channel
(Id) Continuous Drain Current
300 A
300 A
(Pd) Power Dissipation
1,875 W
(RDS(on)) Drain-Source Widerstand max.
1,600 mOhm 
Manufacturer Package
E-Pack
RoHS-Conform

Specifications

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General

Manufacturer
  • Rohm
Type
  • SiC Power MOSFET Module
Series
  • BSM_
Product group
  • U8685 ROHM SiC Power MOSFET-Modules BSM_ C-Pack, E-Pack, G-Pack
Packaging
  • Boxed
Assembly Type
  • Screw Mount
Manufacturer Package
  • E-Pack

Operating conditions

Operating Temperature Min.
  • -40 °C
Operating Temperature Max.
  • 150 °C
Storage Temperature Min.
  • -55 °C
Storage Temperature Max.
  • 150 °C

Electrical properties

(Uds) Max. Drain-Source Voltage Q1
  • 1,200 V
(Uds) Max. Drain-Source Voltage
  • 1.200 V
  • 1.200 V
(Id) Continuous Drain Current Q1
  • 300 A
(Id) Continuous Drain Current
  • 300 A
  • 300 A
(Ugs) Gate-Source Voltage Q1
  • 22 V V
(Ugs) Gate-Source Voltage
  • 22 V
  • 22 V
Number of Channels
  • 2
Polarity
  • N-Channel
(Pd) Power Dissipation
  • 1,875 W
(RDS(on)) Drain-Source Widerstand max.
  • 1,600 mOhm