BSM180D12P3C007
Rohm SiC Power MOSFET Module N-Channel 180A 880W 1.400mOhm C-Pack
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12 Pcs.
12 Pcs.
Planned delivery time
Ø 34 Weeks
Life Cycle Status
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• Active (green)
• NRND = Not Recommended for New Designs (yellow)
• LTB = Last Time Buy (yellow)
• EOL = End of Life (red)
Active
Available (from stock)
Data Sheet
ECAD Model
Prices
Manufacturer bundle 12 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.
Quantity and Options
(at least 12 or multiple of 12)
All prices net plus VAT. We do not deliver to private customers.
Fact Sheet
- Number of Channels
- 2
- Polarity
- N-Channel
- (Id) Continuous Drain Current
- 180 A
180 A - (Pd) Power Dissipation
- 880 W
- (RDS(on)) Drain-Source Widerstand max.
- 1,400 mOhm
- Manufacturer Package
- C-Pack
- RoHS-Conform
Specifications
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Operating conditions
- Operating Temperature Min.
- -40 °C
- Operating Temperature Max.
- 150 °C
- Storage Temperature Min.
- -40 °C
- Storage Temperature Max.
- 125 °C
Electrical properties
- (Uds) Max. Drain-Source Voltage Q1
- 1,200 V
- (Uds) Max. Drain-Source Voltage
- 1.200 V
- 1.200 V
- (Id) Continuous Drain Current Q1
- 180 A
- (Id) Continuous Drain Current
- 180 A
- 180 A
- (Ugs) Gate-Source Voltage Q1
- 22 V V
- (Ugs) Gate-Source Voltage
- 22 V
- 22 V
- Number of Channels
- 2
- Polarity
- N-Channel
- (Pd) Power Dissipation
- 880 W
- (RDS(on)) Drain-Source Widerstand max.
- 1,400 mOhm
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