BSM180D12P3C007
Rohm SiC Power MOSFET Module N-Channel 180A 880W 1.400mOhm C-Pack
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EOL 25.06.2025
Article discontinued
Data Sheet
ECAD Model
Prices
Manufacturer bundle 12 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.
Quantity and Options
(at least 12 or multiple of 12)
All prices net plus VAT. We do not deliver to private customers.
Fact Sheet
- Number of Channels
- 2
- Polarity
- N-Channel
- (Id) Continuous Drain Current
- 180 A
180 A - (Pd) Power Dissipation
- 880 W
- (RDS(on)) Drain-Source Resistance Max.
- 1,400 mOhm
- Manufacturer Package
- C-Pack
- RoHS-Conform
Specifications
Open all
Operating conditions
- Operating Temperature Min.
- -40 °C
- Operating Temperature Max.
- 150 °C
- Storage Temperature Min.
- -40 °C
- Storage Temperature Max.
- 125 °C
Electrical Properties
- (Uds) Max. Drain-Source Voltage
- 1.200 V
- 1.200 V
- (Uds) Max. Drain-Source Voltage Q1
- 1,200 V
- (Id) Continuous Drain Current
- 180 A
- 180 A
- (Id) Continuous Drain Current Q1
- 180 A
- (Ugs) Gate-Source Voltage
- 22 V
- 22 V
- (Ugs) Gate-source voltage Q1
- 22 V V
- Number of Channels
- 2
- Polarity
- N-Channel
- (Pd) Power Dissipation
- 880 W
- (RDS(on)) Drain-Source Resistance Max.
- 1,400 mOhm
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