BSM120D12P2C005

Rohm SiC Power MOSFET Module N-Channel 134A 935W 1.800mOhm  C-Pack

BSM120D12P2C005
Manufacturer Part No.
BSM120D12P2C005
Schukat Part No.
BSM120D12P2C005
Manufacturer
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Item no longer available!

Planned delivery time
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Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between: • Active (green) • NRND = Not Recommended for New Designs (yellow) • LTB = Last Time Buy (yellow) • EOL = End of Life (red)
EOL 04.03.2026
Article discontinued
Replacement / Follow-up View entire series
Data Sheet
ECAD Model
Downloads

Prices

Manufacturer bundle 12 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.

Quantity and Options

(at least 1 or multiple of 1)
All prices net plus VAT. We do not deliver to private customers.

Fact Sheet

Number of Channels
2
Polarity
N-Channel
(Id) Continuous Drain Current
134 A
(Pd) Power Dissipation
935 W
(RDS(on)) Drain-Source Resistance Max.
1,800 mOhm 
Manufacturer Package
C-Pack
RoHS-Conform

Specifications

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General

Manufacturer
  • Rohm
Type
  • SiC Power MOSFET Module
Series
  • BSM_
Product group
  • U8685
Packaging
  • Boxed
Assembly Type
  • Screw Mount
Manufacturer Package
  • C-Pack

Operating conditions

Barrier Layer temperature, min. (TJ)
  • -40 °C
Barrier Layer Temperature, max. (TJ)
  • 150 °C
Storage Temperature Min.
  • -40 °C
Storage Temperature Max.
  • 125 °C

Electrical Properties

(Uds) Max. Drain-Source Voltage
  • 1.200 V
(Id) Continuous Drain Current
  • 134 A
(Ugs) Gate-Source Voltage
  • -6 / 22 V
Number of Channels
  • 2
Polarity
  • N-Channel
(Pd) Power Dissipation
  • 935 W
(RDS(on)) Drain-Source Resistance Max.
  • 1,800 mOhm