BSM120C12P2C201
Rohm SiC Power MOSFET Module N-Channel 134A 935W 1.800mOhm C-Pack
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9 Pcs. in stock
Planned delivery time
Ø 32 Weeks
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between:
• Active (green)
• NRND = Not Recommended for New Designs (yellow)
• LTB = Last Time Buy (yellow)
• EOL = End of Life (red)
Active
Available (from stock)
Data Sheet
ECAD Model
Prices
Manufacturer bundle 12 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.
Quantity and Options
(at least 1 or multiple of 1)
All prices net plus VAT. We do not deliver to private customers.
Fact Sheet
- Number of Channels
- 1
- Polarity
- N-Channel
- (Id) Continuous Drain Current
- 134 A
134 A - (Pd) Power Dissipation
- 935 W
- (RDS(on)) Drain-Source Widerstand max.
- 1,800 mOhm
- Manufacturer Package
- C-Pack
- RoHS-Conform
Specifications
Open all
Operating conditions
- Operating Temperature Min.
- -40 °C
- Operating Temperature Max.
- 150 °C
Electrical properties
- (Uds) Max. Drain-Source Voltage Q1
- 1,200 V
- (Uds) Max. Drain-Source Voltage
- 1.200 V
- 1.200 V
- (Id) Continuous Drain Current Q1
- 134 A
- (Id) Continuous Drain Current
- 134 A
- 134 A
- (Ugs) Gate-Source Voltage Q1
- 22 V V
- (Ugs) Gate-Source Voltage
- 22 V
- 22 V
- Number of Channels
- 1
- Polarity
- N-Channel
- (Pd) Power Dissipation
- 935 W
- (RDS(on)) Drain-Source Widerstand max.
- 1,800 mOhm