FDS8858CZ
Onsemi SMD/SMT Power MOSFET N-Channel/P-Channel 8,6A/-7,3A 2,0W 345mOhm SO-8
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0 Pcs. in stock
Planned delivery time
Ø 13 Weeks
Life Cycle Status
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• Active (green)
• NRND = Not Recommended for New Designs (yellow)
• LTB = Last Time Buy (yellow)
• EOL = End of Life (red)
Active
Available (from stock)
Data Sheet
ECAD Model
Prices
Manufacturer bundle 2500 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.
Quantity and Options
(at least 50 or multiple of 50)
All prices net plus VAT. We do not deliver to private customers.
Fact Sheet
- Number of Channels
- 2
- Polarity
- N-Channel/P-Channel
- (Id) Continuous Drain Current
- 8,6 A / -7,3 A
- (Pd) Power Dissipation
- 2 W
- (RDS(on)) Drain-Source Resistance Max.
- 345 mOhm
- Manufacturer Package
- SO-8
- RoHS-Conform
Specifications
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Operating conditions
- Barrier Layer temperature, min. (TJ)
- -55 °C
- Barrier Layer Temperature, max. (TJ)
- 150 °C
- Storage Temperature Min.
- -55 °C
- Storage Temperature Max.
- 150 °C
Electrical Properties
- (Uds) Max. Drain-Source Voltage
- 30 V / -30 V
- (Id) Continuous Drain Current
- 8,6 A / -7,3 A
- (Ugs) Gate-Source Voltage
- 20 V / 25 V
- (Ugs th) Gate-Source Threshold Voltage
- 1,6 V / -2,1 V
- Number of Channels
- 2
- Polarity
- N-Channel/P-Channel
- (Pd) Power Dissipation
- 2 W
- (RDS(on)) Drain-Source Resistance Max.
- 345 mOhm
- (Qg) Gate Charge
- 17 nC / 33 nC