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HomeProductsDiscrete SemiconductorsTransistorsMOSFETsMOSFETs, SingleISK_NISK036N03LM5AUSA1

ISK036N03LM5AUSA1

Infineon SMD/SMT Power MOSFET N-Channel 81A 39W 3,6mOhm  VSON-6

Manufacturer Part No.
ISK036N03LM5AUSA1
Schukat Part No.
ISK036N03LM5AUSA1
Manufacturer
Infineon
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0 Pcs. in stock

Back Order
3.000 Pcs.
Planned delivery time
Ø 32 Weeks
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between: • Active (green) • NRND = Not Recommended for New Designs (yellow) • LTB = Last Time Buy (yellow) • EOL = End of Life (red)
Active
Available on order
Replacement / Follow-up View entire series
Data Sheet
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ECAD Model
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Prices

Manufacturer bundle 3000 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.

Quantity and Options

(at least 3000 or multiple of 3000)
All prices net plus VAT. We do not deliver to private customers.

Fact Sheet

Number of Channels
1
Polarity
N-Channel
(Id) Continuous Drain Current
81 A
81 A
(Pd) Power Dissipation
39 W
(RDS(on)) Drain-Source Widerstand max.
3.6 mOhm 
Manufacturer Package
VSON-6
RoHS-Conform

Specifications

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General

Manufacturer
  • Infineon
Type
  • Power MOSFET
Series
  • ISK_N
Product group
  • U8741 INF SMD Power MOSFETs ISK_N VSON_
Packaging
  • Reel
Assembly Type
  • SMD/SMT
Pin Count
  • 6
Manufacturer Package
  • VSON-6

Operating conditions

Operating Temperature Min.
  • -55 °C
Operating Temperature Max.
  • 150 °C
Storage Temperature Min.
  • -55 °C
Storage Temperature Max.
  • 150 °C

Electrical properties

(Uds) Max. Drain-Source Voltage Q1
  • 30 V
(Uds) Max. Drain-Source Voltage
  • 30 V
  • 30 V
(Id) Continuous Drain Current Q1
  • 81 A
(Id) Continuous Drain Current
  • 81 A
  • 81 A
(Ugs) Gate-Source Voltage Q1
  • 16 V V
(Ugs) Gate-Source Voltage
  • 16 V
  • 16 V
(Ugs th) Gate-Source Threshold Voltage Q1
  • 1.6 V
(Ugs th) Gate-Source Threshold Voltage
  • 1,6 V
  • 1,6 V
Number of Channels
  • 1
Polarity
  • N-Channel
(Pd) Power Dissipation
  • 39 W
(RDS(on)) Drain-Source Widerstand max.
  • 3.6 mOhm 
(Qg) Gate Charge Q1
  • 7.2 nC
(Qg) Gate Charge
  • 7,2 nC
  • 7,2 nC