IRLHS2242TRPBF

Infineon SMD/SMT Power MOSFET P-Channel -8,5A 2,1W 31mOhm  PQFN-6

Manufacturer Part No.
IRLHS2242TRPBF
Schukat Part No.
IRLHS2242TRPBF
Manufacturer
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3.500 Pcs. in stock

Planned delivery time
Ø 14 Weeks
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between: • Active (green) • NRND = Not Recommended for New Designs (yellow) • LTB = Last Time Buy (yellow) • EOL = End of Life (red)
Active
Available (from stock)
Replacement / Follow-up View entire series
Data Sheet
ECAD Model
Downloads

Prices

Manufacturer bundle 4000 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.

Quantity and Options

(at least 50 or multiple of 50)
All prices net plus VAT. We do not deliver to private customers.

Fact Sheet

Number of Channels
1
Polarity
P-Channel
(Id) Continuous Drain Current
-8,5 A
-8,5 A
(Pd) Power Dissipation
2.1 W
(RDS(on)) Drain-Source Widerstand max.
31 mOhm 
Manufacturer Package
PQFN-6
RoHS-Conform

Specifications

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General

Manufacturer
  • Infineon
Type
  • Power MOSFET
Series
  • IRIRLHS_
Product group
  • U8740 INF SMD Power MOSFETs IRF_S_, IRL_HS, IRLHS_ PQFN_
Packaging
  • Reel
Assembly Type
  • SMD/SMT
Pin Count
  • 6
Manufacturer Package
  • PQFN-6
Notice
  • formerly International Rectifier (IR)

Operating conditions

Operating Temperature Min.
  • -55 °C
Operating Temperature Max.
  • 150 °C
Storage Temperature Min.
  • -55 °C
Storage Temperature Max.
  • 150 °C

Electrical properties

(Uds) Max. Drain-Source Voltage Q1
  • -20 V
(Uds) Max. Drain-Source Voltage
  • -20 V
  • -20 V
(Id) Continuous Drain Current Q1
  • -8.5 A
(Id) Continuous Drain Current
  • -8,5 A
  • -8,5 A
(Ugs) Gate-Source Voltage Q1
  • 12 V V
(Ugs) Gate-Source Voltage
  • 12 V
  • 12 V
(Ugs th) Gate-Source Threshold Voltage Q1
  • -0.8 V
(Ugs th) Gate-Source Threshold Voltage
  • -0,8 V
  • -0,8 V
Number of Channels
  • 1
Polarity
  • P-Channel
(Pd) Power Dissipation
  • 2.1 W
(RDS(on)) Drain-Source Widerstand max.
  • 31 mOhm 
(Qg) Gate Charge Q1
  • 12 nC
(Qg) Gate Charge
  • 12 nC
  • 12 nC