Home
Login
Cart
HomeProductsDiscrete SemiconductorsTransistorsMOSFETsMOSFETs, SingleIRL_HSIRL80HS120

IRL80HS120

Infineon SMD/SMT Power MOSFET N-Channel 12,5A 11,5W 32mOhm  PQFN-6

Manufacturer Part No.
IRL80HS120
Schukat Part No.
IRL80HS120
Manufacturer
Infineon
Enter your company's part number here. Your part number will be referenced on your receipts, such as the order confirmation, invoice or delivery note.
Enter your personal project number here to assign the item to a project. Your part project number will be referenced on your receipts, such as the order confirmation, invoice or delivery note.

0 Pcs. in stock

Back Order
4.000 Pcs.
Planned delivery time
Ø 36 Weeks
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between: • Active (green) • NRND = Not Recommended for New Designs (yellow) • LTB = Last Time Buy (yellow) • EOL = End of Life (red)
Active
Available on order
Replacement / Follow-up View entire series
Data Sheet
Open PDF
ECAD Model
Downloads

Prices

Manufacturer bundle 4000 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.

Quantity and Options

(at least 4000 or multiple of 4000)
All prices net plus VAT. We do not deliver to private customers.

Fact Sheet

Number of Channels
1
Polarity
N-Channel
(Id) Continuous Drain Current
12,5 A
12,5 A
(Pd) Power Dissipation
11.5 W
(RDS(on)) Drain-Source Widerstand max.
32 mOhm 
Manufacturer Package
PQFN-6
RoHS-Conform

Specifications

Open all

General

Manufacturer
  • Infineon
Type
  • Power MOSFET
Series
  • IRL_HS
Product group
  • U8740 INF SMD Power MOSFETs IRF_S_, IRL_HS, IRLHS_ PQFN_
Packaging
  • Reel
Assembly Type
  • SMD/SMT
Pin Count
  • 6
Manufacturer Package
  • PQFN-6

Operating conditions

Operating Temperature Min.
  • -55 °C
Operating Temperature Max.
  • 175 °C
Storage Temperature Min.
  • -55 °C
Storage Temperature Max.
  • 175 °C

Electrical properties

(Uds) Max. Drain-Source Voltage Q1
  • 80 V
(Uds) Max. Drain-Source Voltage
  • 80 V
  • 80 V
(Id) Continuous Drain Current Q1
  • 12.5 A
(Id) Continuous Drain Current
  • 12,5 A
  • 12,5 A
(Ugs) Gate-Source Voltage Q1
  • 20 V V
(Ugs) Gate-Source Voltage
  • 20 V
  • 20 V
(Ugs th) Gate-Source Threshold Voltage Q1
  • 1.7 V
(Ugs th) Gate-Source Threshold Voltage
  • 1,7 V
  • 1,7 V
Number of Channels
  • 1
Polarity
  • N-Channel
(Pd) Power Dissipation
  • 11.5 W
(RDS(on)) Drain-Source Widerstand max.
  • 32 mOhm 
(Qg) Gate Charge Q1
  • 4.7 nC
(Qg) Gate Charge
  • 4,7 nC
  • 4,7 nC