IRL80HS120
Infineon SMD/SMT Power MOSFET N-Channel 12,5A 11,5W 32mOhm PQFN-6
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0 Pcs. in stock
Planned delivery time
Ø 18 Weeks
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between:
• Active (green)
• NRND = Not Recommended for New Designs (yellow)
• LTB = Last Time Buy (yellow)
• EOL = End of Life (red)
Active
Available on order
Data Sheet
ECAD Model
Prices
Manufacturer bundle 4000 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.
Quantity and Options
(at least 4000 or multiple of 4000)
All prices net plus VAT. We do not deliver to private customers.
Fact Sheet
- Number of Channels
- 1
- Polarity
- N-Channel
- (Id) Continuous Drain Current
- 12,5 A
- (Pd) Power Dissipation
- 11.5 W
- (RDS(on)) Drain-Source Resistance Max.
- 32 mOhm
- Manufacturer Package
- PQFN-6
- RoHS-Conform
Specifications
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Operating conditions
- Barrier Layer temperature, min. (TJ)
- -55 °C
- Barrier Layer Temperature, max. (TJ)
- 175 °C
- Storage Temperature Min.
- -55 °C
- Storage Temperature Max.
- 175 °C
Electrical Properties
- (Uds) Max. Drain-Source Voltage
- 80 V
- (Id) Continuous Drain Current
- 12,5 A
- (Ugs) Gate-Source Voltage
- 20 V
- (Ugs th) Gate-Source Threshold Voltage
- 1,7 V
- Number of Channels
- 1
- Polarity
- N-Channel
- (Pd) Power Dissipation
- 11.5 W
- (RDS(on)) Drain-Source Resistance Max.
- 32 mOhm
- (Qg) Gate Charge
- 4,7 nC