IRL100HS121
Infineon SMD/SMT Power MOSFET N-Channel 11A 11,5W 42mOhm PQFN-6
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0 Pcs. in stock
Back Order
4.000 Pcs.
4.000 Pcs.
Planned delivery time
Ø 36 Weeks
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between:
• Active (green)
• NRND = Not Recommended for New Designs (yellow)
• LTB = Last Time Buy (yellow)
• EOL = End of Life (red)
Active
Available on order
Data Sheet
ECAD Model
Prices
Manufacturer bundle 4000 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.
Quantity and Options
(at least 4000 or multiple of 4000)
All prices net plus VAT. We do not deliver to private customers.
Fact Sheet
- Number of Channels
- 1
- Polarity
- N-Channel
- (Id) Continuous Drain Current
- 11 A
11 A - (Pd) Power Dissipation
- 11.5 W
- (RDS(on)) Drain-Source Widerstand max.
- 42 mOhm
- Manufacturer Package
- PQFN-6
- RoHS-Conform
Specifications
Open all
Operating conditions
- Operating Temperature Min.
- -55 °C
- Operating Temperature Max.
- 175 °C
- Storage Temperature Min.
- -55 °C
- Storage Temperature Max.
- 175 °C
Electrical properties
- (Uds) Max. Drain-Source Voltage Q1
- 100 V
- (Uds) Max. Drain-Source Voltage
- 100 V
- 100 V
- (Id) Continuous Drain Current Q1
- 11 A
- (Id) Continuous Drain Current
- 11 A
- 11 A
- (Ugs) Gate-Source Voltage Q1
- 20 V V
- (Ugs) Gate-Source Voltage
- 20 V
- 20 V
- (Ugs th) Gate-Source Threshold Voltage Q1
- 1.7 V
- (Ugs th) Gate-Source Threshold Voltage
- 1,7 V
- 1,7 V
- Number of Channels
- 1
- Polarity
- N-Channel
- (Pd) Power Dissipation
- 11.5 W
- (RDS(on)) Drain-Source Widerstand max.
- 42 mOhm
- (Qg) Gate Charge Q1
- 3.7 nC
- (Qg) Gate Charge
- 3,7 nC
- 3,7 nC