IRFR5505TRLPBF
Infineon SMD/SMT Power MOSFET P-Channel -18A 57W 110mOhm TO-252AA
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Planned delivery time
--- Life Cycle Status
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• Active (green)
• NRND = Not Recommended for New Designs (yellow)
• LTB = Last Time Buy (yellow)
• EOL = End of Life (red)
EOL 01.01.2024
Discontinued by manufacturer without replacement
Data Sheet
ECAD Model
Prices
Manufacturer bundle 3000 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.
Quantity and Options
(at least 50 or multiple of 50)
All prices net plus VAT. We do not deliver to private customers.
Fact Sheet
- Number of Channels
- 1
- Polarity
- P-Channel
- (Id) Continuous Drain Current
- -18 A
-18 A - (Pd) Power Dissipation
- 57 W
- (RDS(on)) Drain-Source Resistance Max.
- 110 mOhm
- Manufacturer Package
- TO-252AA
- RoHS-Conform
Specifications
Open all
Operating conditions
- Barrier Layer temperature, min. (TJ)
- -55 °C
- Barrier Layer Temperature, max. (TJ)
- 150 °C
- Storage Temperature Min.
- -55 °C
- Storage Temperature Max.
- 150 °C
Electrical Properties
- (Uds) Max. Drain-Source Voltage
- -55 V
- -55 V
- (Uds) Max. Drain-Source Voltage Q1
- -55 V
- (Id) Continuous Drain Current
- -18 A
- -18 A
- (Id) Continuous Drain Current Q1
- -18 A
- (Ugs) Gate-Source Voltage
- 20 V
- 20 V
- (Ugs) Gate-source voltage Q1
- 20 V
- (Ugs th) Gate-Source Threshold Voltage
- -4 V
- -4 V
- (Ugs th) Gate-Source Threshold Voltage Q1
- -4 V
- Number of Channels
- 1
- Polarity
- P-Channel
- (Pd) Power Dissipation
- 57 W
- (RDS(on)) Drain-Source Resistance Max.
- 110 mOhm
- (Qg) Gate Charge Q1
- 32 nC
- (Qg) Gate Charge
- 32 nC
- 32 nC
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