IRFR5305TRPBF
Infineon SMD/SMT Power MOSFET P-Channel -31A 110W 65mOhm TO-252AA
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113.410 Pcs. in stock
Planned delivery time
Ø 50 Weeks
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between:
• Active (green)
• NRND = Not Recommended for New Designs (yellow)
• LTB = Last Time Buy (yellow)
• EOL = End of Life (red)
Active
Available (from stock)
Data Sheet
ECAD Model
Prices
Manufacturer bundle 2000 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.
Quantity and Options
(at least 50 or multiple of 50)
All prices net plus VAT. We do not deliver to private customers.
Fact Sheet
- Number of Channels
- 1
- Polarity
- P-Channel
- (Id) Continuous Drain Current
- -31 A
-31 A - (Pd) Power Dissipation
- 110 W
- (RDS(on)) Drain-Source Widerstand max.
- 65 mOhm
- Manufacturer Package
- TO-252AA
- RoHS-Conform
Specifications
Open all
Operating conditions
- Operating Temperature Min.
- -55 °C
- Operating Temperature Max.
- 175 °C
- Storage Temperature Min.
- -55 °C
- Storage Temperature Max.
- 175 °C
Electrical properties
- (Uds) Max. Drain-Source Voltage Q1
- -55 V
- (Uds) Max. Drain-Source Voltage
- -55 V
- -55 V
- (Id) Continuous Drain Current Q1
- -31 A
- (Id) Continuous Drain Current
- -31 A
- -31 A
- (Ugs) Gate-Source Voltage Q1
- 20 V V
- (Ugs) Gate-Source Voltage
- 20 V
- 20 V
- (Ugs th) Gate-Source Threshold Voltage Q1
- -4 V
- (Ugs th) Gate-Source Threshold Voltage
- -4 V
- -4 V
- Number of Channels
- 1
- Polarity
- P-Channel
- (Pd) Power Dissipation
- 110 W
- (RDS(on)) Drain-Source Widerstand max.
- 65 mOhm
- (Qg) Gate Charge Q1
- 63 nC
- (Qg) Gate Charge
- 63 nC
- 63 nC
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