IRFR120ZTRPBF
Infineon SMD/SMT Power MOSFET N-Channel 8,7A 35W 190mOhm TO-252AA
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Planned delivery time
--- Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between:
• Active (green)
• NRND = Not Recommended for New Designs (yellow)
• LTB = Last Time Buy (yellow)
• EOL = End of Life (red)
EOL 01.10.2025
Discontinued by manufacturer without replacement
Data Sheet
ECAD Model
Prices
Manufacturer bundle 2000 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.
Quantity and Options
(at least 50 or multiple of 50)
All prices net plus VAT. We do not deliver to private customers.
Fact Sheet
- Number of Channels
- 1
- Polarity
- N-Channel
- (Id) Continuous Drain Current
- 8,7 A
- (Pd) Power Dissipation
- 35 W
- (RDS(on)) Drain-Source Resistance Max.
- 190 mOhm
- Manufacturer Package
- TO-252AA
- RoHS-Conform
Specifications
Open all
Operating conditions
- Barrier Layer temperature, min. (TJ)
- -55 °C
- Barrier Layer Temperature, max. (TJ)
- 175 °C
- Storage Temperature Min.
- -55 °C
- Storage Temperature Max.
- 175 °C
Electrical Properties
- (Uds) Max. Drain-Source Voltage
- 100 V
- (Id) Continuous Drain Current
- 8,7 A
- (Ugs) Gate-Source Voltage
- 20 V
- Number of Channels
- 1
- Polarity
- N-Channel
- (Pd) Power Dissipation
- 35 W
- (RDS(on)) Drain-Source Resistance Max.
- 190 mOhm
Documents
EOL_106_25_EN.pdf
Other Products
All Products of the Series
