IRFP4368PBF
Infineon THT Power MOSFET N-Channel 195A 520W 1,85mOhm TO-247AC
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Planned delivery time
- Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between:
• Active (green)
• NRND = Not Recommended for New Designs (yellow)
• LTB = Last Time Buy (yellow)
• EOL = End of Life (red)
LTB 31.05.2026
Discontinued by manufacturer with replacement
Data Sheet
ECAD Model
Prices
Manufacturer bundle 25 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.
Quantity and Options
(at least 5 or multiple of 5)
All prices net plus VAT. We do not deliver to private customers.
Fact Sheet
- Number of Channels
- 1
- Polarity
- N-Channel
- (Id) Continuous Drain Current
- 195 A
- (Pd) Power Dissipation
- 520 W
- (RDS(on)) Drain-Source Resistance Max.
- 1.85 mOhm
- Manufacturer Package
- TO-247AC
- RoHS-Conform
Specifications
Open all
Operating conditions
- Barrier Layer temperature, min. (TJ)
- -55 °C
- Barrier Layer Temperature, max. (TJ)
- 175 °C
Electrical Properties
- (Uds) Max. Drain-Source Voltage
- 75 V
- (Id) Continuous Drain Current
- 195 A
- (Ugs) Gate-Source Voltage
- 20 V
- Number of Channels
- 1
- Polarity
- N-Channel
- (Pd) Power Dissipation
- 520 W
- (RDS(on)) Drain-Source Resistance Max.
- 1.85 mOhm
Documents
EOL_PD_358_25_EN.pdf
PCN_073_24_EN.pdf
PCN_076 25_EN.pdf
PCN_2023-059-A_EN.pdf
PCN_2024-099-A_EN.pdf
Other Products
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