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IRF640NPBF

Infineon THT Power MOSFET N-Channel 18A 150W 150mOhm  TO-220AB

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Manufacturer Part No.
IRF640NPBF
Schukat Part No.
IRF640NPBF
Manufacturer
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2.110 Pcs. in stock

Planned delivery time
Ø 10 Weeks
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between: • Active (green) • NRND = Not Recommended for New Designs (yellow) • LTB = Last Time Buy (yellow) • EOL = End of Life (red)
Active
Available (from stock)
Replacement / Follow-up View entire series
Data Sheet
ECAD Model
Downloads

Prices

Manufacturer bundle 50 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.

Quantity and Options

(at least 10 or multiple of 10)
All prices net plus VAT. We do not deliver to private customers.

Fact Sheet

Number of Channels
1
Polarity
N-Channel
(Id) Continuous Drain Current
18 A
18 A
(Pd) Power Dissipation
150 W
(RDS(on)) Drain-Source Widerstand max.
150 mOhm 
Manufacturer Package
TO-220AB
RoHS-Conform

Specifications

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General

Manufacturer
  • Infineon
Type
  • Power MOSFET
Series
  • IRF640N
Packaging
  • Tube
Assembly Type
  • THT
Pin Count
  • 3
Manufacturer Package
  • TO-220AB
Notice
  • formerly International Rectifier (IR)

Operating conditions

Operating Temperature Min.
  • -55 °C
Operating Temperature Max.
  • 175 °C

Electrical properties

(Uds) Max. Drain-Source Voltage Q1
  • 200 V
(Uds) Max. Drain-Source Voltage
  • 200 V
  • 200 V
(Id) Continuous Drain Current Q1
  • 18 A
(Id) Continuous Drain Current
  • 18 A
  • 18 A
(Ugs) Gate-Source Voltage Q1
  • 20 V V
(Ugs) Gate-Source Voltage
  • 20 V
  • 20 V
Number of Channels
  • 1
Polarity
  • N-Channel
(Pd) Power Dissipation
  • 150 W
(RDS(on)) Drain-Source Widerstand max.
  • 150 mOhm