IRF1010NPBF
Infineon THT Power MOSFET N-Channel 85A 180W 11mOhm TO-220AB
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Planned delivery time
--- Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between:
• Active (green)
• NRND = Not Recommended for New Designs (yellow)
• LTB = Last Time Buy (yellow)
• EOL = End of Life (red)
EOL 01.10.2024
Discontinued by manufacturer with replacement
Data Sheet
ECAD Model
Prices
Manufacturer bundle 50 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.
Quantity and Options
(at least 10 or multiple of 10)
All prices net plus VAT. We do not deliver to private customers.
Fact Sheet
- Number of Channels
- 1
- Polarity
- N-Channel
- (Id) Continuous Drain Current
- 85 A
- (Pd) Power Dissipation
- 180 W
- (RDS(on)) Drain-Source Resistance Max.
- 11 mOhm
- Manufacturer Package
- TO-220AB
- RoHS-Conform
Specifications
Open all
Operating conditions
- Barrier Layer temperature, min. (TJ)
- -55 °C
- Barrier Layer Temperature, max. (TJ)
- 175 °C
- Storage Temperature Min.
- -55 °C
- Storage Temperature Max.
- 175 °C
Electrical Properties
- (Uds) Max. Drain-Source Voltage
- 55 V
- (Id) Continuous Drain Current
- 85 A
- (Ugs) Gate-Source Voltage
- 20 V
- Number of Channels
- 1
- Polarity
- N-Channel
- (Pd) Power Dissipation
- 180 W
- (RDS(on)) Drain-Source Resistance Max.
- 11 mOhm
Documents
EOL_PD_105_24_EN.pdf
EOL_PD_105_24A_EN.pdf
PCN_2023-059-A_EN.pdf
Other Products
All Products of the Series
