IPD220N06L3GATMA1

Infineon SMD/SMT Power MOSFET N-Channel 30A 36W 22mOhm  TO-252

IPD220N06L3GATMA1
NEW
Manufacturer Part No.
IPD220N06L3GATMA1
Schukat Part No.
IPD220N06L3GATMA1
Manufacturer
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0 Pcs. in stock

Next Stock Receipt
Week 50/2026
2.500 Pcs.
Planned delivery time
Ø 30 Weeks
Life Cycle Status
The life cycle indicates which market phase the item is in. We distinguish between: • Active (green) • NRND = Not Recommended for New Designs (yellow) • LTB = Last Time Buy (yellow) • EOL = End of Life (red)
Active
Available (from stock)
Replacement / Follow-up View entire series
Data Sheet
ECAD Model
Downloads

Prices

Manufacturer bundle 2500 Pcs.
Manufacturer's packaging unit (Mfr. PU) means the smallest original packaging unit of the manufacturer.
Price per 1 Pcs.

Quantity and Options

(at least 50 or multiple of 50)
All prices net plus VAT. We do not deliver to private customers.

Fact Sheet

Number of Channels
1
Polarity
N-Channel
(Id) Continuous Drain Current
30 A
(Pd) Power Dissipation
36 W
(RDS(on)) Drain-Source Resistance Max.
22 mOhm 
Manufacturer Package
TO-252
RoHS-Conform

Specifications

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General

Manufacturer
  • Infineon
Type
  • Power MOSFET
Series
  • IPD_
Product group
  • U8736
Packaging
  • Reel
Assembly Type
  • SMD/SMT
Pin Count
  • 3
Manufacturer Package
  • TO-252

Operating conditions

Barrier Layer temperature, min. (TJ)
  • -55 °C
Barrier Layer Temperature, max. (TJ)
  • 175 °C
Storage Temperature Min.
  • -55 °C
Storage Temperature Max.
  • 175 °C

Electrical Properties

(Uds) Max. Drain-Source Voltage
  • 60 V
(Id) Continuous Drain Current
  • 30 A
(Ugs th) Gate-Source Threshold Voltage
  • 1,7 V
Number of Channels
  • 1
Polarity
  • N-Channel
(Pd) Power Dissipation
  • 36 W
(RDS(on)) Drain-Source Resistance Max.
  • 22 mOhm 
(Qg) Gate Charge
  • 7 nC